High density plasma CVD process for gapfill into high aspect ratio features
First Claim
1. A method of depositing a film on a substrate disposed in a substrate processing chamber, the method comprising:
- depositing a first portion of the film over the substrate by forming a high density plasma from a first gaseous mixture flown into the process chamber;
thereafter, sputter etching part of the deposited first portion of the film by forming a plasma from a sputtering agent introduced into the processing chamber and biasing the plasma towards the substrate;
thereafter, chemically etching part of the deposited first portion of the film by forming a plasma from a reactive etchant gas introduced into the processing chamber; and
thereafter, depositing a second portion of the film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
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Accused Products
Abstract
A method of depositing a film on a substrate. In one embodiment, the method includes depositing a first portion of the film using a high density plasma to partially fill a gap formed between adjacent features formed on the substrate. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step that forms a plasma from a sputtering agent introduced into the processing chamber and biases the plasma towards the substrate and a subsequent chemical etch step that forms a plasma from a reactive etchant gas introduced into the processing chamber. After the etching sequence is complete, a second portion of the film is deposited over the first portion using a high density plasma to further fill the gap.
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Citations
31 Claims
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1. A method of depositing a film on a substrate disposed in a substrate processing chamber, the method comprising:
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depositing a first portion of the film over the substrate by forming a high density plasma from a first gaseous mixture flown into the process chamber;
thereafter, sputter etching part of the deposited first portion of the film by forming a plasma from a sputtering agent introduced into the processing chamber and biasing the plasma towards the substrate;
thereafter, chemically etching part of the deposited first portion of the film by forming a plasma from a reactive etchant gas introduced into the processing chamber; and
thereafter, depositing a second portion of the film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:
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depositing a first portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first deposition gas comprising a silicon source and an oxygen source;
stopping deposition of the silica glass film and sputter etching the first portion of the film by biasing a high density plasma formed from a sputtering agent introduced into the processing chamber towards the substrate;
thereafter, chemically etching the first portion of the film with reactive species formed from an etchant gas; and
thereafter, depositing a second portion of the silica glass film over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second deposition gas comprising a silicon source and an oxygen source. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
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forming a high density plasma within the substrate processing chamber to heat the substrate to a temperature of at least 400°
C. prior to depositing the silica glass film on the substrate;
maintaining the high density plasma while (i) flowing a first process gas comprising a silicon source and an oxygen source into the processing chamber to deposit a first portion of the silica glass film over the substrate and in the trench using a deposition process that has simultaneous deposition and sputtering components, (ii) flowing a sputtering gas comprising an inert gas, an oxygen source and a fluorine etchant into the process chamber while biasing the plasma towards the substrate to sputter etch the first portion of the silica glass film;
(iii) switching off bias power that biases the plasma towards the substrate and flowing a fluorine etchant and oxygen source into the chamber in order to chemically etch the first portion of the silica glass film, wherein a flow rate of the fluorine etchant is at least 300 percent higher than a flow rate of the fluorine etchant in the sputter etch; and
(iv) flowing a second process gas comprising a silicon source and an oxygen source into the processing chamber to deposit a second portion of the silica glass film over the first portion using a deposition process that has simultaneous deposition and sputtering components.- View Dependent Claims (27, 28, 29, 30, 31)
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Specification