Semiconductor light-emitting element

• US 6,803,603 B1
• Filed: 06/22/2000
• Issued: 10/12/2004
• Est. Priority Date: 06/23/1999
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Furukawa, Chisato, Watanabe, Yukio, Okazaki, Haruhiko, Nitta, Koichi
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): LOUIE, WAI SING
• Application Number:
  US09/603,118
• Time in Patent Office: 1,573 Days
• Field of Search: 257/79-103, 257/690, 257/698, 257/700
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.

Claims

1. A semiconductor light-emitting element having a light-emitting layer for emitting light in a direction of plane, comprising;

a photonics crystal layer on at least one surface of the light-emitting layer.

2. An element according to claim 1, wherein said photonics crystal layer is formed on the light-emitting layer on a side of a compound semiconductor light-emitting element opposite to a light extraction surface.

3. An element according to claim 1, wherein said photonics crystal layer is formed on the light-emitting layer on a light extraction surface side of the semiconductor light-emitting element, and a through dislocation exists on the light extraction surface in a substantially vertical direction to pass light emitted by the light-emitting layer.

4. A semiconductor light-emitting element comprising:

a semiconductor substrate;

a light-emitting layer formed on one surface of said semiconductor substrate; and

a photonics crystal layer fused on another surface of said semiconductor substrate,

wherein the other surface of said semiconductor substrate has a rounded edge.

5. A semiconductor light-emitting element comprising:

a photonics crystal layer; and

at least one light-emitting element formed on each of two surfaces of said photonics crystal layer,

wherein said light-emitting elements emit light with different emission wavelengths.

6. A semiconductor light-emitting element comprising:

a transparent semiconductor substrate;

a Bragg reflective layer formed on said semiconductor substrate;

an active layer formed on said Bragg reflective layer; and

a photonics crystal layer formed on said active layer.