Light emitting device and manufacturing method thereof

• US 6,803,606 B2
• Filed: 03/18/2003
• Issued: 10/12/2004
• Est. Priority Date: 03/20/2002
• Status: Expired due to Term

• Current Assignee: LedComm LLC (IPValuation Partners, LLC)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Takenaka, Yasuji
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): TRAN, LONG K
• Application Number:
  US10/390,180
• Publication Number:
  US 20030183852A1
• Time in Patent Office: 574 Days
• Field of Search: 257/98, 257/13, 257/103, 438/22, 438/25, 438/26, 438/27, 438/29
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor light device includes a light emitting element, a reflector for reflecting a light beam outgoing from the light emitting element and a resin disposed between the light emitting element and the reflector, which are formed on a substrate. A face of the reflector is formed into a rough surface to improve adherence between the reflector and the resin for preventing detachment of the reflector from the resin.

Claims

1. A light emitting device comprising:

a substrate;

a light emitting element on the substrate;

a reflector on the substrate for reflecting a light beam outgoing from the light emitting element; and

a resin disposed between the light emitting element and the reflector on the substrate,

wherein a face of the reflector on that reflects a light beam outgoing from the light emitting element is formed into a rough surface.

2. The light emitting device as defined in claim 1,

wherein the rough surface of the reflector has an arithmetic mean roughness ranging of 1 μ m or more and 20 μ

m or less.

3. The light emitting device as defined in claim 1,

wherein the resin is an epoxy resin whose glass-transition temperature is 40°

C. or more and 100°

C. or less.

4. The light emitting device as defined in claim 1,

wherein the light emitting element is wire-bonded by a gold wire, breaking strength of which is 100 mN or more at a normal temperature.

5. The light emitting device as defined in claim 1,

wherein the reflector is made of a liquid crystal polymer.

6. The light emitting device as defined in claim 5,

wherein the liquid crystal polymer contains a glass at a rate of more than 0 wt % and equal to or less than 30 wt %.

7. The light emitting device as defined in claim 5,

wherein the liquid crystal polymer contains titanium oxide at a rate of more than 0 wt % and equal to or less than 30 wt %.

8. The light emitting device as defined in claim 5,

wherein the liquid crystal polymer contains calcium oxide at a rate of more than 0 wt % and equal to or less than 50 wt %.

9. The light emitting device as defined in claim 5,

wherein the liquid crystal polymer contains a glass at a rate of 20 wt % or more and 30 wt % or less, and also contains titanium oxide at a rate of 20 wt % or more and 30 wt % or less.

10. The light emitting device as defined in claim 5,

wherein the liquid crystal polymer contains a glass at a rate of 5 wt % or more and 25 wt % or less, contains titanium oxide at a rate of 5 wt % or more and 25 wt % or less, and contains calcium oxide at a rate of 5 wt % or more and 25 wt % or less.