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Semiconductor device and method of manufacturing the same

  • US 6,803,622 B2
  • Filed: 10/22/2002
  • Issued: 10/12/2004
  • Est. Priority Date: 08/26/2002
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first insulating film formed on the top surface of the semiconductor substrate;

    a first gate electrode formed on the first insulating film;

    a second insulating film having a three-layered structure made by sequentially depositing a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer on the first gate electrode;

    a second gate electrode formed on the second insulating film;

    a first plane including the side surface of the first gate electrode or the side surface of the second gate electrode; and

    a second plane including the side surface of the second kind of insulating layer, wherein distance between said first plane and said second plane does not exceed 5 nm.

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