Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone

• US 6,803,627 B2
• Filed: 01/15/2004
• Issued: 10/12/2004
• Est. Priority Date: 05/30/2001
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Pfirsch, Frank
• Primary Examiner(s): LOKE, STEVEN HO YIN
• Application Number:
  US10/757,826
• Publication Number:
  US 20040145013A1
• Time in Patent Office: 271 Days
• Field of Search: 257/678, 257/341, 257/342, 257/343, 257/122, 257/129, 257/132, 257/139, 257/141, 257/147, 257/162, 257/138, 257/140, 257/335, 257/168
• US Class Current: 257/341
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/749 with turn-on by field effect
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7824 with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors

Abstract

A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.

Claims

1. A reverse-blocking power semiconductor component, comprising:

a semiconductor body forming a drift path of one conduction type;

a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;

a source metallization;

a source zone of the one conduction type placed in said body zone and connected to said source metallization; and

a region of the one conduction type being inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;

said source metallization being connected electrically only to said source zone.

2. The power semiconductor component according to claim 1, wherein said region inlaid in said body zone is also short-circuited to said source-side part of said body zone.

3. The power semiconductor component according to claim 1, wherein said inlaid region is short-circuited with a purely resistive connection.

4. The power semiconductor component according to claim 1, wherein said inlaid region is short-circuited with a non-rectifying connection.

5. The power semiconductor component according to claim 1, wherein said inlaid region is short-circuited with a metal contact.

6. The power semiconductor component according to claim 5, wherein said metal contact is disposed in said semiconductor body.

7. The power semiconductor component according to claim 5, wherein said metal contact is disposed on a surface of said semiconductor body.

8. The power semiconductor component according to claim 1, wherein said inlaid region acts as an electron collector.

9. The power semiconductor component according to claim 1, wherein said semiconductor body forming the drift path has a doping between 2·

10¹⁶ charge carriers/cm³ and 1·

10¹⁴ charge carriers/cm³.

10. The power semiconductor component according to claim 1, wherein said semiconductor body forming the drift path has a thickness between 2 μ

m to 100 μ

m.

11. The power semiconductor component according to claim 1, including a compensation structure.

12. The power semiconductor component according to claim 11, wherein said compensation structure includes a compensation region inlaid in said drift path.

13. The power semiconductor component according to claim 12, including a floating compensation pillar.

14. The power semiconductor component according to claim 12, including a compensation pillar connected to said body zone.

15. The power semiconductor component according to claim 11, wherein said compensation structure includes a pillar-like compensation region.

16. The power semiconductor component according to claim 1, wherein said semiconductor body has a trench formed therein;

and

a gate is disposed in said trench.

17. The power semiconductor component according to claim 1, including a carrier wafer;

an oxide layer deposited on said carrier wafer; and

said semiconductor body, said body zone, said source metallization, said source zone, and said region are formed on said oxide layer.

18. The power semiconductor component according to claim 1, including an insulating layer buried in said semiconductor body.