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Read-modify-write memory using read-or-write banks

  • US 6,804,162 B1
  • Filed: 04/05/2002
  • Issued: 10/12/2004
  • Est. Priority Date: 04/05/2001
  • Status: Expired due to Fees
First Claim
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1. A circuit arrangement for providing read-modify-write memory, the circuit arrangement comprising:

  • a memory having at least one read-or-write bank and further comprising a read-modify-write bank electrically coupled to the at least one read-or-write bank; and

    control circuitry adapted for using at most one access to each said at least one read-or-write bank for each read-modify-write access to the memory during a single memory access cycle;

    wherein the circuit arrangement is adapted to use at most one access to each said at least one read-or-write bank and only one access to the read-modify-write bank for each read-modify-write access to the memory; and

    wherein the read-modify-write bank has a cycle time that is smaller than the sum of the read cycle time and write cycle time of a slowest read-or-write bank in the memory arrangement, wherein the circuit arrangement is adapted to effect a read-modify-write cycle time that is smaller than the sum of the slowest read-or-write bank'"'"'s read cycle time and write cycle time.

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