Cleaning fluid and cleaning method for component of semiconductor-treating apparatus

• US 6,805,135 B1
• Filed: 11/24/2000
• Issued: 10/19/2004
• Est. Priority Date: 05/26/1998
• Status: Expired due to Fees

• Current Assignee: Nittou Chemical Industries, Ltd., Tokyo Electron Limited
• Original Assignee: Nittou Chemical Industries, Ltd., Tokyo Electron Limited
• Inventors: Yamada, Hitoshi, Kawaguchi, Shinichi, Yamaguchi, Eiji, Hirota, Kenichi, Shimoda, Takahiro, Yuasa, Kiyoshi, Nagayama, Nobuyuki
• Primary Examiner(s): KORNAKOV, MIKHAIL
• Application Number:
  US09/700,704
• Time in Patent Office: 1,425 Days
• Field of Search: 134/2, 134/22.1, 134/22.19, 134/32, 134/39, 134/40, 134/26, 134/28, 134/30, 134/37, 134/42, 510/201, 510/202, 510/203, 510/206, 510/245, 510/254, 510/356, 510/365, 510/405, 510/433, 510/363, 510/238, 438/905
• US Class Current: 134/2
• CPC Class Codes: C11D 2111/20 Industrial or commercial equipment, e.g. reactors, tubes or engines
• CPC Class Codes: C11D 3/2068 Ethers
• CPC Class Codes: C11D 3/28 Heterocyclic compounds containing nitrogen in the ring
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

A cleaning solution is used to remove a byproduct derived from a decomposed substance of a process gas containing C and F. The cleaning solution contains 75 wt % N-methyl-2-pyrrolidone, 15 wt % ethylene glycol monobutyl ether, 0.5 wt % surfactant, and 9.5 wt % water. The content of an alkali metal in the cleaning solution is set to be less than 10 ppb.

Claims

1. A cleaning solution for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;

and

wherein the surfactant contains fluorine and a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.

2. The cleaning solution according to claim 1, wherein the water concentration is 5 to 20 wt %.

3. The cleaning solution according to claim 1, wherein the surfactant concentration is 0.1 to 1.0 wt %.

4. The cleaning solution according to claim 1, wherein the composition comprises 10 ppb or less of an alkali metal.

5. A cleaning method for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the method comprising:

removing the component from the process chamber; and

dipping the component in a bath of a cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;

wherein, in the cleaning solution, a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.

6. The cleaning method according to claim 5, wherein the component is dipped in the bath of the cleaning solution while the component is stored in a cage with 500 to 100 meshes.

7. The cleaning method according to claim 5, wherein the component is dipped in the bath of the cleaning solution while a temperature of the cleaning solution is set at 50 to 80°

C.

8. The cleaning method according to claim 5, wherein the semiconductor process comprises etching a layer consisting essentially of a silicon oxide on the target substrate by using the process gas.

9. The cleaning method according to claim 5, wherein the cleaning solution further contains an alkali metal concentration of less than 10 ppb.

10. The cleaning method according to claim 5, wherein the water concentration is 5 to 20 wt %.

11. The cleaning method according to claim 5, wherein the surfactant concentration is 0.1 to 1.0 wt %.

12. The cleaning method according to claim 11, wherein the surfactant contains fluorine.

13. The cleaning method according to claim 5, wherein the surfactant contains fluorine.

14. A cleaning solution for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;

and

wherein a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.

15. The cleaning solution according to claim 14, wherein the water concentration is 5 to 20 wt %.

16. The cleaning solution according to claim 14, wherein the surfactant concentration is 0.1 to 1.0 wt %.

17. The cleaning solution according to claim 14, wherein the solution contains 10 ppb or less of an alkali metal.