Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream

• US 6,805,728 B2
• Filed: 12/09/2002
• Issued: 10/19/2004
• Est. Priority Date: 12/09/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Marganski, Paul J., Sweeney, Joseph D., Wang, Luping, Olander, W. Karl
• Primary Examiner(s): Spitzer, Robert H.
• Application Number:
  US10/314,727
• Publication Number:
  US 20040107833A1
• Time in Patent Office: 680 Days
• Field of Search: 951/16, 951/31--40, 961/08, 961/42, 961/31--36
• US Class Current: 95/133
• CPC Class Codes: B01D 2253/10 Inorganic adsorbents
• CPC Class Codes: B01D 2253/112 Metals or metal compounds not provided for in B01D2253/104 or B01D2253/106
• CPC Class Codes: B01D 2253/304 Linear dimensions, e.g. particle shape, diameter
• CPC Class Codes: B01D 2257/2022 Bromine
• CPC Class Codes: B01D 2257/2025 Chlorine
• CPC Class Codes: B01D 2257/2027 Fluorine
• CPC Class Codes: B01D 2257/204 Inorganic halogen compounds
• CPC Class Codes: B01D 2257/2042 Hydrobromic acid
• CPC Class Codes: B01D 2257/2045 Hydrochloric acid
• CPC Class Codes: B01D 2257/2047 Hydrofluoric acid
• CPC Class Codes: B01D 2257/206 Organic halogen compounds
• CPC Class Codes: B01D 2257/406 Ammonia
• CPC Class Codes: B01D 2257/70 Organic compounds not provided for in groups B01D2257/00 - B01D2257/602
• CPC Class Codes: B01D 2258/0216 from CVD treatment or semi-conductor manufacturing
• CPC Class Codes: B01D 2259/4146 Contiguous multilayered adsorbents
• CPC Class Codes: B01D 53/0407 Constructional details of adsorbing systems

Abstract

An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, Co₃O₄, ZnO, MnO₂ and mixtures thereof.

Claims

1. A process for reducing a concentration of at least one toxic gas component from a semiconductor process effluent stream containing same, said method comprising:

contacting said semiconductor process effluent with a first sorbent layer composition so as to retain at least a portion of the toxic gas component therein; and

contacting said process effluent with a second layer sorbent composition, so as to retain a second portion of the toxic gas component therein,

wherein said first sorbent layer comprises a material having a high sorptive capacity for said toxic component and said second sorbent layer material comprises a material having a high capture rate sorptive affinity for the toxic component.

2. The process according to claim 1, wherein said semiconductor process is selected from the group consisting of:

ion implantation, metal organic chemical vapor deposition and plasma enhanced chemical vapor deposition.

3. The process according to claim 1, wherein said toxic gas component is selected from the group consisting of:

AsH₃, PH₃, SbH₃, BiH₃, GeH₄, SiH₄, NH₃, HF, HCl, HBr, Cl₂, F₂, Br₂, BCl₃, BF₃, AsCl₃, PCl₃, PF₃, GeF₄, AsF₅, WF₆, SiF₄, SiBr₄, COF₃, OF₂, SO₂F₂, SOF₂, WOF4, ClF3(hfac)In(CH₃)₂H₂As(t-butyl), H₂P(t-butyl), Br₂Sb(CH₃), SiHCl₃, and SiH₂Cl₂.

4. The process according to claim 1, wherein said toxic gas component is selected from the group consisting of:

AsH₅, PH₃, SbH₃, BiH₃, GeH₄, SiH₄, NH₃, H₂As(t-butyl), H₂P(t-butyl), Br₂Sb(CH₃), SiHCl₃, and SiH₂C₂.

5. The apparatus according to claim 1, wherein said toxic gas component is selected from the group consisting of:

HF, MCl, HBr, Cl₂, F₂, Br₂, BCl₃, BF₃, AsCl₃, PCl₃ , PF₃, GeF₄, AsF₅, WF₆, SiF₄, SiBr₄, COF₂, OF₂, SO₂, SO₂F₂, SOF₂, WOF4, ClF3 (hfac)In(CH₃)₂ and Br₂Sb(CH₃).

6. The process according to claim 1, having an overall sorptive capacity greater than the sum of the capacitios of said first and second sorbent layer.

7. The process according to claim 1, wherein said high capacity sorbent material comprises at least one of:

copper oxide, copper hydroxide copper carbonate, and basic copper carbonate.

8. The process according to claim 1, wherein said high capture rate sorbent material comprises at least one component selected from the group consisting of, carbon, CuO, Cu₂O, MnO_x, wherein x is from 1 to 2 inclusive, AgO, Ag₂O, CoO, Co₃,O₄, Cr₃,O₃, CrO₃, MoO₂, MoO₃, TiO₂, NiO, LiOH, Ca(OH)₂, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃, K₂CO₃ , KHCO₃, Na₂CO₃, NaHCO₃, NH₄OH, Sr(OH)₂, HCOONa, BaOH, KMnO₄, SiO₂, ZnO, MgO, Mg(OH)₂, Na₂,O₃,S₂, triethylenediamine (TEDA) and mixtures thereof.

9. The process according to claim 1, wherein said high capture rate sorbent material further comprises a stabilizer selected from the group consisting of:

Be, Mg, V, Mo, Co, Ni, Cu, Zn, B, Al, Si, Pb, Sb, Bi, oxides, hydroxides hydrogen carbonates, hydrogen sulfates, hydrogen phosphates, sulfides, peroxides, halides, carboxylates, and oxy acids thereof.

10. The process according to claim 1, wherein said high capture rate sorbent material comprises at least one component selected from the group consisting of:

carbon, NaOH, KOH, LiOH, Ca(OH)₂, and NH₄OH.

11. The process according to claim 1, wherein said toxic gas component is arsine.

12. The process according to claim 11, wherein said concentration of arsine is reduced to less than 50 ppb.

13. An apparatus for abatement of at least one toxic gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, such apparatus comprising:

a first sorbent bed material having a high capacity sorbent affinity for said at least one toxic gas component;

a second and discreet sorbent bed material having a high capture rate for said at least one toxic gas component; and

a flow path joining the process in gas flow communication with the sorbent bed materials such that the effluent stream contacts the first sorbent bed material then the second sorbent bed material to at least partially remove the at least one toxic gas component from the effluent stream.

14. The apparatus according to claim 13, wherein said semiconductor manufacturing process is related to a Group III-V process.

15. The apparatus according to claim 13, wherein said semiconductor manufacturing process is selected from the group consisting of:

ion implantation, metal organic chemical vapor deposition and plasma enhanced chemical vapor deposition.

16. The apparatus according to claim 13, wherein said toxic gas component is selected from the group consisting of:

AsH₃, PH₃, SbH₃, BiH₃, GeH₄, SiH₄, NH₃, HF, HCl, HBr, Cl₂, F₂, Br₂, BCl₃, BF₃, AsCl₃, PCl₃,PF₃, GeF₄, AsF₃, WF₆, SiF₄, SiBr₄, COF₂, OF₃, SO₃F₃, SOF₂, WOF4, ClF3 (hfac)In(CH₃,)₂H₂As(t-butyl), H₂P(t-butyl), Br₂Sb(CH₃), SiHCl₃, and SiH₂Cl₂.

17. The apparatus according to claim 13, wherein said toxic gas component is selected from the group consisting of:

AsH₃, PH₃, SbH₃, BiH₃, GeH₄, SiH₄, NH₃, H₁As(t-butyl), H₂P(t-butyl), Br₂Sb(CH₃), SiHCl₃, and SiH₂, Cl₂.

18. The apparatus according to claim 13, wherein said toxic gas component is selected from the group consisting of:

HF, HCl, HBr, Cl₂, F₂, Br₂, BCl₃, BF₃, AsCl₃, PCl₃, PF₃, GeF₄, AsF₅, WF₆, SiF₄, SiBr₄, COF₂, OF₂, SO₂, SO₂F₂, SOF₂, WOF4, ClF 3(hfac)In(CH₃)₂ and Br₂Sb(CH₃).

19. An apparatus for abatement of at least one acid gas, hydride gas or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, such apparatus comprising:

a first sorbent bed material having a high capacity sorbent affinity for said at least one acid gas, hydride gas or by-product thereof;

a second and discreet sorbent bed material having a high capture rate sorbent affinity for said at least one acid gas, hydride gas or by-product thereof; and

a flow path joining the process in gas flow communication with the sorbent bed materials such that the effluent stream contacts the first sorbent bed material then the second sorbent bed material to at least partially remove the at least one acid gas, hydride gas or by-product thereof from the effluent stream.

20. A layered dry resin sorbent system for abatement of an acid gas, hydride gas or by-product thereof, comprising;

a first sorbent bed material having a high capacity sorbent affinity for said acid gas, hydride gas or by-product thereof;

a second and discreet sorbent bed material having a high capture rate sorbent affinity for said acid gas, hydride gas or by-product thereof; and

a flow path joining the process in gas flow communication with the sorbent bed materials such that the effluent stream contacts the first sorbent bed material then the second sorbent bed material to at least partially remove the at least one acid gas, hydride gas or by-product thereof from the effluent stream.

21. The layered dry resin sorbent system according to claim 20, wherein said hydride gas is selected from the group consisting of:

AsH₃, PH₃, SbH₃, BiH₃, GeH₄, SiH₄, NH₃, H₂As(t-butyl), H₂P(t-butyl), Br₂Sb(CH₃), SiHCl₃, and SiH₂Cl₂.

22. The layered dry resin sorbent system according to claim 20, wherein said acid gas is selected from the group consisting of:

HF, HCl, HBr, Cl₂, F₂, Br₂, BCl₃, BF₃, AsCl₃, PCl₃, PF₃, GeF₄, AsF₅, WF₆, SiF₄, SiBr₄, COF₂, OF₂, SO₂, SO₂F₂, SOF₂, WOF₄, ClF₃, (hfac)In(CH₃)₂ and Br₂Sb(CH₃).

23. The layered dry resin sorbent system according to claim 20, wherein said first and second sorbent beds differ by the temperature at which reductive hydrogenation becomes auto-catalystic.

24. The layered dry resin sorbent system according to claim 20, wherein said second sorbent bed has a capture rate that is higher than said first sorbent bed.

25. The layered dry resin sorbent system according to claim 20, wherein said sorbent bed material comprises an article selected from the group consisting of:

beads, spheres, rings, toroidal shapes, irregular shapes, rods, cylinders, flakes, films, cubes, polygonal geometric shapes, sheets, fibers, coils, helices, meshes, sintered porous masses, granules, pellets, tablets, powders, particulates, extrudates, cloth form materials, web form materials, honeycomb matrix monolith, matrix monolith, composites (of the sorbent article with other components), or comminuted or crushed forms of the foregoing conformations.

26. The layered dry resin sorbent system according to claim 20, wherein said sorbent bed material comprises, particulates having a size range of from about 0.1 mm to 1.5 cm.

27. The layered dry resin sorbent system according to claim 20, wherein said sorbent bed material is selected from the group consisting of physisorbent and chemisorbent.

28. The layered dry resin sorbent system according to claim 20, wherein said first and second beds are housed in a single containment system.

29. The layered dry resin sorbent system according to claim 20, wherein said first and second beds are housed in separate containment systems.

30. The layered dry resin sorbent system according to claim 20, wherein said first and second sorbent bed materials comprise a blended mixture of sorbent materials.

31. The layered dry resin sorbent system according to claim 20, having a volumetric ratio of first sorbent bed to second sorbent bed from about 1:

2to 1;

1.

32. The layered dry resin sorbent system according to claim 20, wherein said high capacity sorbent materials comprises an oxidized form of copper.

33. The layered dry resin sorbent system according to claim 20, wherein said high capacity sorbent material is selected from the group consisting of, copper hydroxide, Cu(OH₂);

copper oxide, CuO;

copper carbonate, CuCO₃, basic copper carbonate, CuCO₃.Cu(OH)₂, and combinations thereof.

34. The layered dry resin sorbent system according to claim 20, wherein said high capacity sorbent material comprises CuCO₃.Cu(OH)_2.

35. The layered dry resin sorbent system according to claim 20, wherein said high capacity sorbent material resists H2 reduction reaction up to temperatures in excess of 180°

C.

36. The layered dry resin sorbent system according to claim 20, wherein said high capacity sorbent material comprises from about 20 to 100 wt % active ingredient.

37. The layered dry resin sorbent system according to claim 20, wherein said high capture rate sorbent material comprises at least one component selected from the group consisting or, carbon, CuO, Cu₂O, MnO_x, wherein x is from 1 to 2 inclusive, AgO, Ag₃O, CoO, Co₃O₄, Cr₃O₃, CrO₃, MoO₂, MoO₃, TiO₂, NiO, LiOH, Ca(OH)₃, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃, K₃CO₃, KHCO₃, Na₂CO₃, NaHCO₃, NH₄OH, Sr(OH)₃, HCOONa, BaOH, KMnO₄, SiO₃, ZnO, MgO, Mg(OH)₂, Na₂O₃, S₂, triethylenediamine (TEDA) and mixtures thereof.

38. The layered dry resin sorbent system according to claim 37, wherein said high capture rate sorbent material further comprises a stabilizer selected from the group consisting of:

Bc, Mg, V, Mo, Co, Ni, Cu, Zn, B, Al, Si, Pb, Sb, Bi, oxides, hydroxides hydrogen carbonates, hydrogen sulfates, hydrogen phosphates, sulfides, peroxides, halides, carboxylates, and oxy acids thereof.

39. The layered dry resin sorbent system according to claim 20, wherein said high capture rate sorbent material comprises at least one component selected from the group consisting of:

carbon, NaOH, KOH, LiOH, Ca(OH)₂ and NH₄,OH.

40. The layered dry resin sorbent system according to claim 20, wherein said high capture rate sorbent material comprises a composition selected from the group consisting of:

1. copper oxide, (Cu 6%);

Silver oxide, (Ag 0.1%);

zinc oxide, (Zn 6.0%);

Molybdenum oxide, (Mo 2.5%);

triethylenediamine, (TEDA 3.5%); and

activated carbon; and

2. manganese oxide, (Mn 22%);

copper oxide, (Cu 23%);

cobalt oxide, (Co 10%);

silver oxide (Ag 3.5%); and

aluminum oxide. (Al 2.6%).

41. The layered dry resin sorbent system according to claim 40, having a TLV sorbent capacity for arsine at 1 cm/sec of 3.67 moles/liter resin or 102 liters AsH₃/kg resin.

42. The layered dry resin sorbent system according to claim 20, wherein said high capture rate sorbent material comprises:

copper oxide, (Cu 6%);

Silver oxide, (Ag 0.1%);

zinc oxide, (Zn 6.0%);

Molybdenum oxide, (Mo 2.5%);

triethylenediamine, (TEDA 3.5%); and

activated carbon, said sorbent system having a TLV sorbent capacity for arsine at 1 cm/sec of 3.67 moles/liter resin or 102 liter AsH₃/kg resin.

43. The layered dry resin sorbent system according to claim 20, having a TLV sorbent capacity for arsine at 1 cm/sec of 3.67 moles/liter resin or 102 liters AsH₃/kg resin.

44. The layered dry resin sorbent system according to claim 20, further comprising means for monitoring the sorbent materials for exhaustion.