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Method of barrier-less integration with copper alloy

  • US 6,806,192 B2
  • Filed: 01/24/2003
  • Issued: 10/19/2004
  • Est. Priority Date: 01/24/2003
  • Status: Active Grant
First Claim
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1. A method for creation of a copper interconnect, comprising:

  • providing a substrate, having one or more insulating layers formed thereover;

    creating an opening in said one or more insulating layers;

    lining sidewalls of the opening with a compound layer by applying methods of deposit and etch, said compound layer comprising;

    (i) a patterned layer of metal barrier material over the sidewalls, thereby including a layer of metal barrier material oxide created over the surface there-of, exposing a bottom surface of the opening;

    (ii) a patterned layer of doped copper over the layer of barrier material and the metal barrier material oxide layer; and

    (iii) a layer of pure copper over the layer of doped copper;

    filling the opening with copper; and

    applying an anneal to the substrate and the there-over created layers.

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