Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
First Claim
1. A hermetically sealed microdevice comprising:
- a substrate;
a device microstructure attached to the substrate;
a silicon cap having a base portion and a sidewall that defines a recess in the cap, the cap attached to the substrate such that the recess in the cap houses the device microstructure and forms a hermetically scaled cavity adjacent the device microstructure; and
at least one via and a cover, be via extending through the substrate and terminating at a via contact point on an inner surface of the substrate, the via cover attached to the inner surface of the substrate in a region around the via contact point on the substrate to hermetically seal the via;
wherein the silicon cap has a single crystalline silicon getter layer embedded along its recess for maintaining a vacuum within the cavity.
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Accused Products
Abstract
A microdevice that comprises a device microstructure (22), a substrate (24), and a silicon cap (30, 130). The device microstructure (22) is attached to the substrate (24). The silicon cap (30, 130) has a base portion (32, 132) and a sidewall (34, 134) that defines a recess (36, 136) in the cap (30, 130). The silicon cap (30, 130) is attached to the substrate (24) such that the recess (36, 136) in the cap (30, 130) houses the device microstructure (22) and forms a hermetically sealed cavity (38) adjacent the device microstructure (22). The silicon cap (30, 130) further has a single crystalline silicon getter layer (40, 140) embedded along its recess (36, 136) for maintaining a vacuum within the cavity (38). There are also methods of making a microdevice containing a single crystalline silicon getter layer (40, 140).
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Citations
15 Claims
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1. A hermetically sealed microdevice comprising:
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a substrate;
a device microstructure attached to the substrate;
a silicon cap having a base portion and a sidewall that defines a recess in the cap, the cap attached to the substrate such that the recess in the cap houses the device microstructure and forms a hermetically scaled cavity adjacent the device microstructure; and
at least one via and a cover, be via extending through the substrate and terminating at a via contact point on an inner surface of the substrate, the via cover attached to the inner surface of the substrate in a region around the via contact point on the substrate to hermetically seal the via;
wherein the silicon cap has a single crystalline silicon getter layer embedded along its recess for maintaining a vacuum within the cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A microdevice assembly comprising:
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a hermetically sealed housing having an internal cavity;
a microdevice die having a substrate and a microstructure formed thereon, the microdevice die mounted within the internal cavity of the hermetically sealed housing;
at least one and a cover, the via extending though the housing and terminating at a via contact point on an inner surface of the housing, the via cover attached to the inner surface of the housing in a region around the via contact point to hermetically seal the via; and
at least one porous single crystalline silicon getter die mounted within the internal cavity for maintaining a vacuum within the internal cavity surrounding the microdevice die. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification