In-situ post epitaxial treatment process

• US 6,808,564 B2
• Filed: 03/12/2003
• Issued: 10/26/2004
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Original Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Inventors: Dietze, Gerald R.
• Primary Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US10/388,270
• Publication Number:
  US 20030159649A1
• Time in Patent Office: 594 Days
• Field of Search: 117/88, 117/93, 117/97, 117/106
• US Class Current: 117/88
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: C30B 33/005 Oxydation
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer on said semiconductor wafer substrate. The formation area consists essentially of an epitaxial layer process chamber. The semiconductor wafer substrate is introduced into the epitaxial layer process chamber and an epitaxial layer is formed on at least one surface of the semiconductor wafer substrate. At least one epitaxial layer surface is substantially hydrophobic. Then, a chemical reagent is introduced into said epitaxial layer process chamber. The chemical reagent reacts with the epitaxial layer surface in situ to form an outer layer.

Claims

1. An epitaxial reactor, comprising:

a semiconductor wafer substrate support;

a source of a first chemical reagent for forming a hydrophobic layer on a wafer substrate; and

a source of a second chemical reagent for forming a hydrophilic layer on said hydrophobic layer.

2. The epitaxial reactor of claim 1, comprising at least one formation chamber for forming said hydrophobic layer on said wafer substrate and for forming said hydrophilic layer on said hydrophobic layer.

3. The epitaxial reactor of claim 2, further comprising a temperature control for raising an operational temperature of said at least one formation chamber to a deposition temperature, maintaining the operational temperature of said at least one formation chamber at said deposition temperature during the formation of an epitaxial layer on at least one surface of said wafer substrate, and reducing the operational temperature from said deposition temperature to an unload temperature.

4. The epitaxial reactor of claim 3, wherein the second chemical reagent is at said unload temperature in said at least one formation chamber.

5. The epitaxial reactor of claim 2, wherein said at least one formation chamber for forming said hydrophobic layer on said wafer substrate and for forming said hydrophilic layer on said hydrophobic layer is a single chamber.

6. The epitaxial reactor of claim 1, wherein said second chemical reagent contains oxygen.

7. The epitaxial reactor of claim 1, wherein said second chemical reagent contains nitrogen.

8. An epitaxial reactor, comprising:

a semiconductor wafer substrate support;

at least one epitaxial layer formation chamber for forming a hydrophobic layer on said wafer substrate; and

at least one hydrophilic layer formation chamber for forming a hydrophilic layer on said hydrophobic layer.

9. The epitaxial reactor of claim 8, further comprising a source of a first chemical reagent for forming said hydrophobic layer on said wafer substrate in said at least one epitaxial layer formation chamber.

10. The epitaxial reactor of claim 9, further comprising a source of a second chemical reagent for forming a hydrophilic layer on said hydrophobic layer in said at least one hydrophilic layer formation chamber.

11. The epitaxial reactor of claim 10, wherein said second chemical reagent contains Oxygen.

12. The epitaxial reactor of claim 10, wherein said second chemical reagent contains nitrogen.

13. The epitaxial reactor of claim 10, further comprising a temperature control for raising an operational temperature of said at least one epitaxial layer formation chamber to a deposition temperature, maintaining the operational temperature of said at least one epitaxial layer formation chamber at said deposition temperature during the formation of an epitaxial layer on at least one surface of said wafer substrate, and reducing the operational temperature from said deposition temperature to an unload temperature.

14. The epitaxial reactor of claim 13, wherein said second chemical reagent is at said unload temperature in said at least on hydrophilic layer formation chamber.

15. The epitaxial reactor of claim 8, wherein said at least one epitaxial layer formation chamber for forming said hydrophobic layer on said wafer substrate and said at least one hydrophilic layer formation chamber for forming said hydrophilic layer on said hydrophobic layer are the same chamber.

16. An epitaxial reactor, comprising:

an epitaxial deposition chamber; and

at least one additional reaction chamber for at least one process selected from the group consisting of oxidation, nitridation, CVD backside deposition, and plasma etching.

17. The epitaxial reactor of claim 16, wherein said at least one process is oxidation.

18. The epitaxial reactor of claim 16, wherein said at least one process is nitridation.

19. The epitaxial reactor of claim 16, wherein said at least one process is CVD backside deposition.

20. The epitaxial reactor of claim 16, wherein said at least one process is plasma etching.