Pulse precursor deposition process for forming layers in semiconductor devices

• US 6,808,758 B1
• Filed: 06/09/2000
• Issued: 10/26/2004
• Est. Priority Date: 06/09/2000
• Status: Expired due to Term

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Thakur, Randhir P. S.
• Primary Examiner(s): Beck, Shrive P.
• Assistant Examiner(s): Markham, Wesley D.
• Application Number:
  US09/590,464
• Time in Patent Office: 1,600 Days
• Field of Search: 427/380, 427/398.4, 427/553, 427/557, 427/558, 427/559, 427/582, 427/583, 427/584, 427/585, 427/587, 427/593, 427/248.1, 427/255.15, 427/255.7, 427/379, 427/487, 427/492, 427/497, 427/599, 427/509, 427/581, 427/592, 118/715, 118/724, 118/725, 118/641, 118/642, 117/88-89, 117/93, 117/105, 117/3, 117/84, 117/102, 117/104, 438/680, 438/681, 438/788, 438/792, 438/761
• US Class Current: 427/559
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/48 by irradiation, e.g. photolysis, radiolysis, particle radiation
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precursor fluid is converted into a solid which forms a layer on the substrate. In accordance with the present invention, the precursor fluid is pulsed into the process chamber in a manner such that the fluid is completly exhausted or removed from the chamber in between each pulse. Light energy can be used in forming the solid layers.

Claims

1. A process for forming layers in electronic devices comprising the steps of:

providing a reaction chamber, the reaction chamber comprising a cold wall chamber;

placing a semiconductor wafer in said reaction chamber;

heating said semiconductor wafer with a thermal heating device placed adjacent to said wafer to a temperature of at least about 300°

C.;

pulsing a precursor fluid into said reaction chamber, said precursor fluid forming a solid layer on said semiconductor wafer;

purging said reaction chamber by flowing an inert gas through said reaction chamber after each pulse in order to substantially remove any of said precursor fluid not converted into a solid; and

repeating the above steps a plurality of times in order to increase the thickness of the solid layer and wherein the process further comprises the step of annealing the solid layer multiple times during formation of the layer, the multiple annealing steps occurring after the reaction chamber is purged by the inert gas and prior to the next pulse of the precursor fluid, the solid layer being annealed by exposing the solid layer to thermal light energy, the light energy heating the solid layer to a temperature sufficient to anneal the layer.

2. A process as defined in claim 1, wherein said precursor fluid comprises a gas.

3. A process as defined in claim 1, wherein said thermal heating device comprises an electrical resistance heater.

4. A process as defined in claim 1, further comprising the step of maintaining said reaction chamber at a pressure of less than about 760 torr when pulsing said precursor fluid into said reaction chamber.

5. A process as defined in claim 1, further comprising the step of maintaining said reaction chamber at a pressure of less than about 3 torr when pulsing said precursor fluid into said reaction chamber.

6. A process as defined in claim 1, further comprising the step of maintaining said reaction chamber at a pressure of from about 10⁻

2 torr to about 10<sup>−

7</sup> torr when pulsing said precursor fluid into said reaction chamber.

7. A process as defined in claim 1, wherein said precursor fluid comprises a liquid vapor.

8. A process as defined in claim 1, wherein said thermal light energy is supplied by light energy sources positioned outside said reaction chamber.

9. A process as defined in claim 1, wherein said solid layer comprises a dielectric material.

10. A process as defined in claim 1, wherein said solid layer comprises a conductive material.

11. A process as defined in claim 1, wherein said solid layer comprises zirconium oxide.

12. A process as defined in claim 1, wherein said precursor fluid comprises a hydride.

13. A process as defined in claim 1, wherein said solid layer comprises a material selected from the group consisting of tungsten, tungsten nitride, tantalum nitride, titanium nitride, copper, aluminum, ruthenium oxide, iridium oxide, and silver.

14. A process as defined in claim 1, wherein said solid layer comprises a material selected from the group consisting of zirconium oxide, aluminum oxide, a nitride, barium strontium titanate and a silicate.

15. A process as defined in claim 1, wherein said solid layer comprises zirconium hafnium oxide.

16. A process as defined in claim 1, wherein the reaction chamber includes walls, the walls being made from an insulating material.

17. A process as defined in claim 16, wherein the insulating material comprises quartz.

18. A process as defined in claim 1, wherein the reaction chamber includes a cooling system for cooling the walls of the reaction chamber.

19. A process for forming layers in electronic devices comprising the steps of:

providing a reaction chamber, the reaction chamber comprising a cold wall chamber;

placing a substrate in said reaction chamber;

pulsing a precursor fluid into said reaction chamber;

exposing said precursor fluid to thermal light energy in said reaction chamber simultaneous with each pulse of the precursor fluid, the light energy causing said precursor fluid to convert into a solid layer on said substrate;

after each pulse of the precursor fluid, decreasing the amount of thermal light energy and purging the reaction chamber by flowing an inert gas through the reaction chamber, the inert gas cooling the solid layer and substantially removing any of the precursor fluid not converted into a solid; and

wherein between selected pulses of the precursor fluid and after cooling, annealing the solid layer by exposing the solid layer to thermal light energy prior to the next pulse, the light energy heating the solid layer to a temperature sufficient to anneal the layer.

20. A process as defined in claim 19, further comprising the step of maintaining said reaction chamber at a pressure of less than about 5 torr when pulsing said precursor fluid into said reaction chamber.

21. A process as defined in claim 19, wherein the reaction chamber includes walls, the walls being made from an insulating material.

22. A process as defined in claim 19, wherein the reaction chamber includes a cooling system for cooling the walls of the reaction chamber.

23. A process as defined in claim 19, wherein the solid layer is annealed after each pulse of the precursor fluid.