Process for fabricating a microelectromechanical structure

• US 6,808,952 B1
• Filed: 09/05/2002
• Issued: 10/26/2004
• Est. Priority Date: 09/05/2002
• Status: Expired due to Fees

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Sniegowski, Jeffry J., Stevens, James E., Hetherington, Dale L., Mani, Seethambal S., Volk, Steven R., Resnick, Paul J., Krygowski, Thomas W., Habermehl, Scott D.
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US10/236,631
• Time in Patent Office: 782 Days
• Field of Search: 438/48-54, 438/14
• US Class Current: 438/48
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain

Abstract

A process is disclosed for forming a microelectromechanical (MEM) structure on a substrate having from 5 to 6 or more layers of deposited and patterned polysilicon. The process is based on determining a radius of curvature of the substrate which is bowed due to accumulated stress in the layers of polysilicon and a sacrificial material used to buildup the MEM structure, and then providing one or more stress-compensation layers on a backside of the substrate to flatten the substrate and allow further processing.

Claims

1. A process for fabricating a microelectromechanical (MEM) structure on a device side of a substrate, comprising steps for:

(a) partially building up the MEM structure by depositing and patterning a plurality of layers of polysilicon on the device side of the substrate with each adjacent pair of polysilicon layers being separated by a layer of a sacrificial material, and with the layers of polysilicon and the sacrificial material having an accumulated stress of a sufficient magnitude after a step for annealing the substrate to produce a bowing of the substrate characterized by a radius of curvature of the substrate which is less than a critical value;

(b) depositing a stress-compensation layer on a backside of the substrate opposite the device side to reduce the bowing of the substrate, with the radius of curvature of the substrate being increased to more than the critical value; and

(c) depositing and patterning at least one additional layer of polysilicon on the device side of the substrate to complete building up the MEM structure.

2. The process of claim 1 wherein the sacrificial material comprises silicon dioxide or a silicate glass.

3. The process of claim 1 wherein the stress-compensation layer comprises silicon dioxide or the sacrificial material.

4. The process of claim 1 wherein the radius of curvature of the substrate is determined by reflecting a light beam off the device side of the substrate.

5. The process of claim 1 wherein the MEM structure comprises at least six layers of polysilicon.

6. The process of claim 1 wherein the critical value for the radius of curvature is in the range of 10-20 meters.

7. The process of claim 1 further including a step for planarizing at least one layer of the sacrificial material by chemical-mechanical polishing.

8. The process of claim 7 wherein the annealing step is performed prior to the planarizing step.

9. The process of claim 1 further including a step for removing the sacrificial material to release the MEM structure for movement.

10. The process of claim 9 wherein the step for removing the sacrificial material also removes the stress-compensation layer.

11. The process of claim 1 wherein the step for patterning each polysilicon layer comprises masking and etching the polysilicon layer.

12. The process of claim 1 wherein the step for patterning each polysilicon layer comprises masking and etching an underlying layer of the sacrificial material to form a mold wherein the polysilicon layer is deposited.

13. A process for fabricating a microelectromechanical (MEM) structure on a device side of a substrate, comprising steps for:

(a) partially building up the MEM structure by depositing and patterning a plurality of alternating layers of polysilicon and a sacrificial material;

(b) measuring a radius of curvature of the substrate by reflecting a light beam off the substrate, with the radius of curvature being due to a bowing of the substrate that arises from an accumulated stress in the layers of polysilicon and the sacrificial material which cannot be completely eliminated by a step for annealing the substrate;

(c) depositing a stress-compensation layer on a backside of the substrate opposite the device side when the measured radius of curvature is less than a critical value; and

(d) repeating steps (a)-(c) at least one more time to complete the buildup of the MEM structure.

14. The process of claim 13 further including a step for removing the sacrificial material to release the MEM structure for movement.

15. The process of claim 14 further including a step for removing at least one stress-compensation layer from the backside of the substrate.

16. The process of claim 13 wherein the MEM structure comprises at least six layers of polysilicon.

17. The process of claim 13 wherein elements of the MEM structure are formed from the layers of polysilicon.

18. The process of claim 13 wherein the sacrificial material comprises silicon dioxide or a silicate glass.

19. The process of claim 13 wherein the stress-compensation layer comprises silicon dioxide or the sacrificial material.

20. The process of claim 13 wherein the critical value for the radius of curvature is in the range of 10-20 meters.

21. The process of claim 13 further including a step for planarizing at least one layer of the sacrificial material by chemical-mechanical polishing.

22. The process of claim 21 wherein the annealing step is performed prior to the planarizing step.

23. A process for fabricating a microelectromechanical (MEM) structure on a device side of a substrate, comprising steps for:

(a) depositing and patterning a plurality of alternating layers of polysilicon and a sacrificial material to partially build up the MEM structure on the device side of the substrate, with the layers of polysilicon and the sacrificial material having an accumulation of stress therein resulting in a bowing of the substrate;

(b) depositing a stress-compensation layer on a backside of the substrate opposite the device side when a radius of curvature of the substrate due to the bowing of the substrate is below a critical value, with the stress-compensation layer increasing the radius of curvature above the critical value; and

(c) repeating steps (a)-(c) at least one more time to complete the buildup of the MEM structure on the substrate.

24. The process of claim 23 further including a step for determining the radius of curvature of the substrate.

25. The process of claim 23 further including at least one step for annealing the substrate to reduce the accumulation of stress in the layers of polysilicon and the sacrificial material.

26. The process of claim 25 wherein the step for annealing the substrate is performed prior to determining the radius of curvature of the substrate.

27. The process of claim 25 wherein the step for annealing the substrate is performed after the step for depositing the stress-compensation layer.

28. The process of claim 25 wherein at least one layer of the sacrificial material is patterned by a planarizing step comprising chemical-mechanical polishing.

29. The process of claim 28 wherein the step for annealing the substrate is performed prior to the planarizing step.

30. The process of claim 23 further including a step for removing the sacrificial material from the device side of the substrate to release the MEM structure for movement.

31. The process of claim 30 further including a step for removing at least one stress-compensation layer from the backside of the substrate.

32. The process of claim 23 wherein the step for determining the radius of curvature of the substrate comprises reflecting a light beam off the substrate.

33. The process of claim 23 wherein the sacrificial material comprises silicon dioxide or a silicate glass.

34. The process of claim 23 wherein the stress-compensation layer comprises silicon dioxide or the sacrificial material.

35. The process of claim 23 wherein the critical value of the radius of curvature is in the range of 10-20 meters.

36. The process of claim 23 wherein the MEM structure comprises at least six layers of polysilicon.