Method of fabricating an integrated circuit that seals a MEMS device within a cavity

• US 6,808,955 B2
• Filed: 11/02/2001
• Issued: 10/26/2004
• Est. Priority Date: 11/02/2001
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Ma, Qing
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US10/005,667
• Publication Number:
  US 20030087469A1
• Time in Patent Office: 1,089 Days
• Field of Search: 438/51, 438/50, 438/52, 438/53, 438/55, 438/64, 438/107, 438/108, 438/455, 438/456, 438/612, 438/613
• US Class Current: 438/51
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A method of fabricating an integrated circuit that includes a microelectromechanical (MEMS) device. The method includes forming a MEMS device on a substrate and forming an integrated circuit. The method further includes coupling the substrate to the integrated circuit to form a sealed cavity that includes the MEMS device. The substrate and the integrated circuit are coupled together in a controlled environment to establish a controlled environment within the cavity where the MEMS device is located.

Claims

1. A method comprising:

forming a MEMS device on a substrate;

etching a conductive layer on the substrate to form a first ring layer and a first pad such that the MEMS device and the first pad are within the first ring layer;

forming an integrated circuit; and

bonding the first ring layer and the first pad to the integrated circuit to form a sealed cavity that includes the MEMS device and the first pad.

2. The method of claim 1, wherein forming the integrated circuit includes etching a conductive layer on the integrated circuit to form a second ring layer and a second pad such that the second pad is within the second ring layer.

3. The method of claim 2, wherein bonding the first ring layer and the first pad on the substrate to the integrated circuit includes bonding the first ring layer on the substrate to the second ring layer on the integrated circuit and bonding the first pad on the substrate to the second pad on the integrated circuit.

4. The method of claim 1, wherein etching a conductive layer on the substrate to form a first ring layer includes etching the conductive layer to form a first rectangular ring layer on the substrate.

5. The method of claim 1, wherein bonding the first ring layer and the first pad to the integrated circuit to form a sealed cavity includes bonding the first ring layer and the first pad to the integrated circuit in a controlled environment.

6. The method according to claim 5, wherein bonding the first ring layer and the first pad to the integrated circuit in a controlled environment includes bonding the first ring layer and the first pad to the integrated circuit in a vacuum.

7. A method comprising:

forming a MEMS device on a substrate;

etching a conductive layer on an integrated circuit to form a first ring layer and a first pad;

bonding the first ring layer and the first pad to the substrate to form a sealed cavity that includes the MEMS device and the first pad, the first pad not mechanically engaging the MEMS device.

8. The method of claim 7, further comprising etching a conductive layer on the substrate to form a second ring layer and a second pad such that the MEMS device and the second pad are within the second ring layer.

9. The method of claim 8, wherein bonding the first ring layer and the first pad on the integrated circuit to the substrate includes bonding the second ring layer on the substrate to the first ring layer on the integrated circuit and bonding the second pad on the substrate to the first pad on the integrated circuit.

10. The method of claim 7, wherein etching a conductive layer on the integrated circuit to form a first ring layer includes etching the conductive layer to form a first rectangular ring layer on the integrated circuit.

11. The method of claim 7, wherein bonding the first ring layer and the first pad to the substrate to form a sealed cavity includes bonding the first ring layer and the first pad to the substrate in a controlled environment.

12. The method according to claim 11, wherein bonding the first ring layer and the first pad to the substrate in a controlled environment includes bonding the first ring layer and the first pad to the substrate in a vacuum.

13. A method comprising:

forming a MEMS device on a substrate;

etching a first conductive layer on the substrate to form a first ring layer and a first pad such that the MEMS device and the first pad are within the first ring layer;

forming an integrated circuit;

etching a second conductive layer on the integrated circuit to form a second ring layer and a second pad such that the second pad is within the second ring layer;

bonding the first pad on the substrate to the second pad on the integrated circuit; and

bonding the first ring layer on the substrate to the second ring layer on the integrated circuit to form a sealed cavity that includes the MEMS device and the first and second pads.

14. The method of claim 13, wherein bonding the first ring layer on the substrate to the second ring layer on the integrated circuit includes coupling the substrate to the integrated circuit in a controlled environment.

15. The method according to claim 14, wherein coupling the substrate to the integrated circuit in a controlled environment includes coupling the substrate to the integrated circuit in a vacuum.

16. The method of claim 13, further comprising:

etching the first conductive layer to form at least one additional pad within the first ring layer;

etching the second conductive layer to form at least one additional pad within the second ring layer; and

bonding the at least one additional pad on the substrate to the at least one additional pad on the integrated circuit within the sealed cavity.