Method for fabricating metal electrode with atomic layer deposition (ALD) in semiconductor device

• US 6,808,978 B2
• Filed: 12/30/2002
• Issued: 10/26/2004
• Est. Priority Date: 04/26/2002
• Status: Expired due to Term

• Current Assignee: Intellectual Discovery Co., Ltd.
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kim, Younsoo
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US10/330,436
• Publication Number:
  US 20030201541A1
• Time in Patent Office: 666 Days
• Field of Search: 438/238, 438/239, 438/386, 438/387, 438/244, 438/253, 438/396
• US Class Current: 438/239
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28562 Selective deposition

Abstract

A method for fabricating a semiconductor memory device, includes the steps of loading a substrate into a reaction chamber for an atomic layer deposition, injecting an precursor consisting of M and X into the reaction chamber and including an adsorption precursor onto a surface of the substrate, wherein M is one of nickel (Ni), palladium (Pd) and platinum (Pt) and X is ligand, purging the reaction chamber, injecting a reaction gas into the reaction chamber and forming a metal layer by reacting the precursor adsorbed on the surface of the substrate with the, reaction gas and purging the reaction chamber.

Claims

1. A method for fabricating a semiconductor memory device, comprising the steps of:

loading a substrate into a reaction chamber for an atomic layer deposition;

injecting a precursor consisting of M and X into the reaction chamber and including an adsorption precursor onto a surface of the substrate, wherein M is one of nickel (Ni), palladium (Pd) and platinum (Pt) and X is ligand;

purging the reaction chamber;

injecting a reaction gas into the reaction chamber and forming a metal layer by reacting the precursor adsorbed on the surface of the substrate with the reaction gas, wherein the reaction gas is a gas selected from the group consisting of NH₃, hidrazine, C₁˜

C₁₀ alkylhydrazine, C₁˜

C₁₀ dialkylhydrazine and a mixture gas thereof; and

purging the reaction chamber.

2. The method as recited in claim 1, wherein the precursor is MX₂ or MX₄.

3. The method as recited in claim 2, further comprising the step of preheating the substrate at a temperature of about 100°

C. to 700°

C. before injecting the precursor.

4. The method as recited in claim 2, wherein the ligand is a material selected from the group consisting of H₂, Cl, Br, I, C₁˜

C₁₀ alkyl, C₂˜

C₁₀ alkenyl, C₁˜

C₈ alkoxy, C₆˜

C₁₂ aryl, β

-diketonates, cyclopentadienyl, C₁˜

C₈ alkylcyclopentadienyl and derivatives thereof including halogens therein.

5. The method as recited in claim 2, wherein a purge gas selected from a group consisting of N₂, He, Ne, Ar and a mixture gas thereof is injected at the step of purging the reaction chamber.

6. The method as recited in claim 2, wherein an Ar gas or an N₂ gas is used as a carrier gas at the step of injecting the precursor for carrying the precursor into the reaction chamber.

7. The method as recited in claim 2, wherein the metal layer is one of a gate electrode, bitline and an electrode of a capacitor.