Method to fill deep trench structures with void-free polysilicon or silicon
First Claim
Patent Images
1. A method of fabricating a semiconductor device, comprising:
- forming a trench having sidewalls in a semiconductor substrate;
depositing a liner over the sidewalls; and
growing a filler within the trench from the liner.
5 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
-
Citations
32 Claims
-
1. A method of fabricating a semiconductor device, comprising:
-
forming a trench having sidewalls in a semiconductor substrate;
depositing a liner over the sidewalls; and
growing a filler within the trench from the liner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
forming a first mask over the liner;
depositing a second mask within the trench, the second mask covering a segment of the first mask;
removing portions of the first mask not covered by second mask;
removing the second mask;
removing portions of the liner not covered by the first mask; and
removing remaining portions of the first mask.
-
-
14. The method of claim 1, further comprising in situ doping the filler during the growing step.
-
15. The method of claim 1, wherein the trench is a high aspect ratio trench.
-
16. A method of fabricating a semiconductor device, comprising:
-
forming a trench having sidewalls in a semiconductor substrate;
depositing a first liner over the sidewalls;
depositing a second liner over the first liner;
forming a mask within the trench, the mask covering a segment of the second liner;
etching portions of the second liner not covered by mask;
removing the mask;
etching portions of the first liner not covered by the second liner;
etching remaining portions of the second liner; and
growing a filler within the trench from the first liner. - View Dependent Claims (17, 18, 19, 20, 21, 22)
depositing the mask within the trench; and
recessing the mask to a desired depth within the trench.
-
-
21. The method of claim 16, wherein the step of etching the portions of the first liner is performed by isotropic etching.
-
22. The method of claim 16, wherein etching the remaining portions of the second liner is performed using buffered hydrofluoric acid.
-
23. A method of fabricating a semiconductor device, comprising:
-
providing a fill material within a trench, the trench having sidewalls in a semiconductor substrate;
exposing a void within the fill material; and
growing a healing material from the fill material to substantially fill the void. - View Dependent Claims (24, 25, 26, 27, 28, 29)
-
-
30. A method of fabricating a capacitor, comprising:
-
forming a trench having sidewalls in a semiconductor substrate;
forming a buried plate in the semiconductor substrate adjacent to a lower portion of the trench;
applying a dielectric liner along the sidewalls in the lower portion of the trench;
forming a collar along the sidewalls in an upper portion of the trench;
forming a liner over the sidewalls; and
growing an inner electrode within the trench from the liner. - View Dependent Claims (31, 32)
forming a first mask over the liner;
depositing a second mask within the trench, the second mask covering a segment of the first mask;
removing portions of the first mask not covered by second mask;
removing the second mask;
removing portions of the liner not covered by the first mask; and
removing remaining portions of the first mask.
-
-
32. The method of claim 30, further comprising electrically connecting a transistor to the inner electrode.
Specification