Method of producing a thin layer of semiconductor material
DC CAFCFirst Claim
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1. A method for producing a thin film comprising:
- providing a first substrate having a face surface;
introducing hydrogen ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the first surface to the microcavities, the microcavities reside between solid bridges of the first substrate, and the hydrogen ions are introduced into the first substrate at a temperature and at a total amount so as not to fracture the solid bridges during energizing of the first substrate;
bonding a second substrate to the face surface of the first substrate; and
applying mechanical forces to fracture the solid bridges.
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Abstract
The invention relates to a method of producing a thin layer of semiconductor material including:
a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,
a thermal treatment step in order to achieve coalescence of the microcavities
a possibly, a step of creating at least one electronic component (5) in the thin layer (6),
a separation step of separating the thin layer (6) from the rest (7) of the wafer.
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Citations
16 Claims
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1. A method for producing a thin film comprising:
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providing a first substrate having a face surface;
introducing hydrogen ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the first surface to the microcavities, the microcavities reside between solid bridges of the first substrate, and the hydrogen ions are introduced into the first substrate at a temperature and at a total amount so as not to fracture the solid bridges during energizing of the first substrate;
bonding a second substrate to the face surface of the first substrate; and
applying mechanical forces to fracture the solid bridges. - View Dependent Claims (2, 3, 4, 9, 10, 11, 12)
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5. A method for producing a thin film comprising:
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providing a first substrate having a face surface;
introducing hydrogen ions into the first substrate at the face surface and forming microcavities in the first substrate, wherein the microcavities define a thin film layer extending from the first surface to the microcavities, the microcavities reside between solid bridges of the first substrate, the hydrogen ions are introduced below the hydrogen diffusion temperature of the first substrate, and the total amount of hydrogen is below that necessary to fracture the solid bridges between the thin film layer and the first substrate during energizing of the first substrate;
bonding a second substrate to the face surface of the first substrate; and
applying mechanical forces to fracture the solid bridges. - View Dependent Claims (6, 7, 8, 13, 14, 15, 16)
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Specification