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Wiring line and manufacture process thereof and semiconductor device and manufacturing process thereof

  • US 6,809,021 B2
  • Filed: 02/03/2003
  • Issued: 10/26/2004
  • Est. Priority Date: 12/18/1998
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming a multi-layered film comprising a first conductive layer, a second conductive layer on the first conductive layer, and a third conductive layer on the second conductive layer;

    patterning the multi-layered film to form a first wiring line;

    forming an insulating film over the first wiring line;

    forming a contact hole extending through the insulating film and reaching the first wiring line;

    forming a second wiring line electrically connected with the first wiring line through the contact hole, and wherein the second wiring line is connected with an upper surface of the second conductive layer at a bottom portion of the contact hole.

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