High-k gate dielectric with uniform nitrogen profile and methods for making the same
First Claim
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1. A gate structure for a transistor in a semiconductor device, the gate structure comprising:
- a dielectric structure formed over a semiconductor body, the dielectric structure comprising;
a bulk portion comprising a high-k dielectric material, the high-k dielectric material of the bulk portion comprising a nitrogen concentration of about 3 atomic percent or more and a nitrogen concentration variation of about 4 percent or less; and
an interface portion comprising a dielectric material between the bulk portion and the semiconductor body, the interface portion having a nitrogen concentration of about 3 atomic percent or less; and
a gate electrode structure comprising a conductive material formed over the bulk portion of the dielectric structure.
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Abstract
High-k transistor gate structures and fabrication methods therefor are provided, wherein a gate dielectric interface region near a semiconductor substrate is provided with very little or no nitrogen, while the bulk high-k dielectric is provided with a uniform nitrogen concentration.
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15 Claims
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1. A gate structure for a transistor in a semiconductor device, the gate structure comprising:
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a dielectric structure formed over a semiconductor body, the dielectric structure comprising;
a bulk portion comprising a high-k dielectric material, the high-k dielectric material of the bulk portion comprising a nitrogen concentration of about 3 atomic percent or more and a nitrogen concentration variation of about 4 percent or less; and
an interface portion comprising a dielectric material between the bulk portion and the semiconductor body, the interface portion having a nitrogen concentration of about 3 atomic percent or less; and
a gate electrode structure comprising a conductive material formed over the bulk portion of the dielectric structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A gate dielectric structure in a semiconductor device, the gate dielectric structure comprising:
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a bulk portion comprising a high-k dielectric material, the high-k dielectric material of the bulk portion comprising a nitrogen concentration of about 3 atomic percent or more and a nitrogen concentration variation of about 4 atomic percent or less; and
an interface portion comprising a dielectric material between the bulk portion and a semiconductor body, the interface portion having a nitrogen concentration of about 3 atomic percent or less. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification