Passive solid-state magnetic field sensors and applications therefor

• US 6,809,515 B1
• Filed: 07/20/1999
• Issued: 10/26/2004
• Est. Priority Date: 07/31/1998
• Status: Expired due to Fees

• Current Assignee: Spinix Corporation
• Original Assignee: Spinix Corporation
• Inventors: Li, Yi-Qun, Zhang, Chun, Dionne, Gerald F., OʼHandley, Robert C.
• Primary Examiner(s): PATIDAR, JAY M
• Application Number:
  US09/358,177
• Time in Patent Office: 1,925 Days
• Field of Search: 324/160, 324/166, 324/173, 324/174, 324/207.13, 324/207.24, 324/207.25, 324/207.26, 324/209, 324/117.R, 324/244, 324/260, 738/617.7, 738/610.8, 310/331, 310/321, 310/364, 310/323, 333/55.R, 333/61
• US Class Current: 324/260
• CPC Class Codes: G01R 33/02 Measuring direction or magnitude of magnetic fields or magnetic flux G01R33/20 takes precedence
• CPC Class Codes: G01R 33/18 Measuring magnetostrictive properties

Abstract

Passive solid-state magnetic sensors are based on the combination of magnetorestrictive materials and piezoelectric materials. Sensors have applications in rotor speed detection, magnetic field detection, read heads, and MRAM, for example.

Claims

1. A magnetic field sensor comprising a magnetostrictive material in contact with a piezoelectric material, and configured such that, when the magnetostrictive material is subjected to an alternating magnetic field, a change in at least one dimension of the magnetostrictive material induces a strain in, and produces a detectable voltage signal in, the piezoelectric material, and wherein during operation the magnetic field sensor does not consume any external electrical power;

and wherein the magnetic field sensor comprises a multilayer structure having a single layer of a first one of the magnetostrictive and piezoelectric material, and two layers of the second one of the magnetostrictive and piezoelectric materials positioned so that the single layer of the first material lies between the two layers of the second material.

2. A magnetic field sensor as described in claim 1, wherein the detectable voltage signal is indicative of the rotation of a rotor.

3. A sensor as described in claim 2, wherein the rotation of the rotor is indicative of a fluid flow, where the magnetic rotor is located in the flow path of, and is turned by, the flow of the fluid.

4. The magnetic field sensor as described in claim 1, wherein the multilayer structure comprises a single layer of piezoelectric material and two layers magnetostrictive material positioned so that the layer of piezoelectric material lies between the two layers of magnetostrictive material.

5. The magnetic field sensor as described in claim 1, wherein the multilayer structure comprises a single layer of magnetostrictive material and two layers of piezoelectric material positioned so that the layer of magnetostrictive material lies between the two layers of piezoelectric material.

6. A magnetic field sensor as described in claim 1, wherein the detectable voltage signal indicative of an electrical current in an electrical conductor.

7. A magnetic field sensor as described in claim 1, additionally comprising a high impedance readout circuit, connected to the layer of piezoelectric material, wherein a sensitivity of the sensor is proportional to a thickness of the piezoelectric layer and substantially independent of a surface area of the multilayer structure.

8. A magnetic field sensor as described in claim 1, wherein the sensor is supported as a cantilever in which one end of the sensor is allowed to strain freely to thereby increase the sensitivity.

9. A magnetic field sensor as described in claim 1, wherein the multilayer structure comprises a read head for reading stored information on a recording medium.

10. A magnetic field sensor as described in claim 1, wherein the magnetostrictive material is a metal alloy.

11. A magnetic field sensor as described in claim 1, wherein the field sensitivity of the magnetic field sensor is at least 5 mV output signal per Oe of applied magnetic field.

12. A magnetic field sensor as described in claim 1, wherein field sensitivity of the magnetic field sensor is at least 10 mV output signal per Oe of applied magnetic field.

13. A magnetic field sensor comprising a magnetostrictive material in contact with a piezoelectric material, and configured such that, when the magnetostrictive material is subjected to an alternating magnetic field, a change in at least one dimension of the magnetostrictive material induces a strain in, and produces a detectable voltage signal in, the piezoelectric material and wherein during operation the magnetic field sensor does not consume any external electrical power, the sensor comprising a magnetostrictive material substrate and a plurality of piezoelectric stripes on a surface of the substrate.

14. A magnetic field sensor as described in claim 13, wherein the magnetostrictive material is a ferrite.

15. A magnetic field sensor as described in claim 13, wherein the piezoelectric material comprises at least one patterned stripe of electrically insulating piezoelectric material.

16. A magnetic field sensor as described in claim 15, wherein the magnetostrictive material is a ferrite.

17. A magnetic field sensor as described in claim 15, wherein the layer of piezoelectric material comprises at least two stripes of piezoelectric material connected electrically in series.

18. A magnetic field sensor as described in claim 17, wherein the magnetostrictive material is a ferrite.

19. A magnetic field sensor as described in claim 13, wherein the magnetostrictive material is a metal alloy.