Method and apparatus for forming deposition film, and method for treating substrate

• US 6,811,816 B2
• Filed: 07/16/2002
• Issued: 11/02/2004
• Est. Priority Date: 05/01/2000
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Tsuzuki, Hidetoshi, Kanai, Masahiro, Takai, Yasuyoshi, Tamura, Hideo, Shimoda, Hiroshi
• Primary Examiner(s): VERSTEEG, STEVEN H
• Application Number:
  US10/195,543
• Publication Number:
  US 20030010623A1
• Time in Patent Office: 840 Days
• Field of Search: 427/248.1, 427/445
• US Class Current: 427/248.1
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01L 31/20 such devices or parts thereof comprising amorphous semiconductor materials
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

Claims

1. A method for forming a deposition film on a substrate in a film deposition chamber, wherein a gas adsorptive member is placed in a space communicating with the film deposition chamber, the deposition film being deposited while continuously feeding a released gas component generated from the member into the space.

2. A method for forming a deposition film according to claim 1, wherein the released gas component is fed by reeling off the gas adsorptive member.