Circuit configuration for a current switch of a bit/word line of a MRAM device
First Claim
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1. A circuit configuration for a current switch of a line, selected from one of a bit line and a word line, of a magnetoresistive random access memory (MRAM) device, comprising:
- a bi-directional switch having a first input/output coupled to a first end of said line and a second input/output coupled to a current source, and a control input; and
a voltage driver maintaining said control input at a high voltage to decrease the ON resistance of the bi-directional switch.
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Abstract
A circuit configuration for a current switch of a bit line or a word line of a magnetoresistive random access memory (MRAM) device, comprising a directional switch and a voltage driver that, in operation, reduces the ON resistance of the directional switch. In one embodiment, each terminal of the line is provided with such a switch.
15 Citations
27 Claims
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1. A circuit configuration for a current switch of a line, selected from one of a bit line and a word line, of a magnetoresistive random access memory (MRAM) device, comprising:
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a bi-directional switch having a first input/output coupled to a first end of said line and a second input/output coupled to a current source, and a control input; and
a voltage driver maintaining said control input at a high voltage to decrease the ON resistance of the bi-directional switch. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A circuit configuration for writing an information content in a memory cell of a MRAM device, comprising:
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(a) line, selected from one of a bit line and a word line, coupled to the memory cell of a plurality of such cells;
(b) a first driving circuit, comprising;
a first bi-directional switch having a first input/output coupled to a first end of said line and a second input/output coupled to a first current source, and a control input;
a first voltage driver coupled to the control input of the first bi-directional switch; and
a first sink transistor having an input coupled to a second input/output of the first bi-directional switch and an output coupled to a ground terminal of the line;
(c) a second driving circuit, comprising;
a second bi-directional switch having a first input/output coupled to a second end of said line and a second input/output coupled to a second current source, and a control input;
a second voltage driver coupled to the control input of the second bi-directional switch; and
a second sink transistor having an input coupled to a second input/output of the second bi-directional switch and an output coupled to the ground terminal of the line; and
(d) a controller controlling the first driving circuit and the second driving circuit. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A circuit configuration for a current switch of a line, selected from one of a bit line and a word line, of a magnetoresistive random access memory (MRAM) device, comprising:
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an unidirectional switch having an output coupled to a first end of said line and an input coupled to a current source, and a control input; and
a voltage driver maintaining said control input at a high voltage to decrease the ON resistance of the unidirectional switch. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A circuit configuration for writing an information content in a memory cell of a MRAM device, comprising:
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(a) line, selected from one of a bit line and a word line, coupled to the memory cell of a plurality of such cells;
(b) a driving circuit, comprising;
a unidirectional switch having an output coupled to a first end of said line and an output coupled to a current source, and a control input;
a voltage driver coupled to the control input of the unidirectional switch; and
a sink transistor having an input coupled to a second end of said line and an output coupled to a ground terminal of the line; and
(c) a controller controlling the driving circuit. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification