Endpoint detection in substrate fabrication processes
First Claim
1. An endpoint detection method for a process performed in a substrate processing chamber with an energized gas, the method comprising:
- (a) detecting a process variable of the process, the process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber;
(b) issuing an endpoint signal when the process variable is indicative of an endpoint of the process;
(c) detecting a process parameter of the process, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position; and
(d) determining if the endpoint signal is true or false by evaluating the process parameter.
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Abstract
In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.
122 Citations
30 Claims
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1. An endpoint detection method for a process performed in a substrate processing chamber with an energized gas, the method comprising:
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(a) detecting a process variable of the process, the process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber;
(b) issuing an endpoint signal when the process variable is indicative of an endpoint of the process;
(c) detecting a process parameter of the process, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position; and
(d) determining if the endpoint signal is true or false by evaluating the process parameter. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An endpoint detection method for a process performed in a substrate processing chamber with an energized gas, the method comprising:
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(a) detecting a process variable of the process, the process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber;
(b) issuing an endpoint signal when the process variable is indicative of an endpoint of the process; and
(c) detecting a process parameter of the process, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position;
(d) evaluating the process parameter to set a fault flag if the process parameter is not a predetermined value or is not in a range of predetermined values; and
(e) determining the endpoint signal to be (i) false if the endpoint signal is issued and the fault flag is set, or (ii) true if the endpoint signal is issued and the fault flag is not set. - View Dependent Claims (9, 10)
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11. An endpoint detection method for a process performed in a substrate processing chamber with an energized gas, the method comprising:
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(a) detecting an intensity of (i) a radiation from the energized gas, or (ii) a radiation reflected from a substrate in the chamber;
(b) determining if the intensity of the radiation corresponds to a first value or is in a first range of values;
(c) detecting a process parameter of the process performed in the chamber;
(d) determining if the process parameter is in a second range of values corresponding to a response coefficient in the equation;
where R is an RF power applied to the energized gas, P is a pressure of the gas in the chamber, F1, F2, and F3 are gas flow rates, and AR, AP, AF1, AF2,and AF3 are their respective response coefficients; and
(e) determining if an endpoint of the process is reached when the radiation intensity is in the first range of values and the process parameter is in the second range of values. - View Dependent Claims (12, 13, 14)
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15. An endpoint detection apparatus for detecting an endpoint of a process performed in a substrate processing chamber with an energized gas, the apparatus comprising:
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(a) one or more detectors to detect;
(1) a process variable of the process, the process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (ii) a reflected power level of the energized gas, and (iv) a temperature in the chamber; and
(2) a process parameter of the process, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a gas pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position; and
(b) a controller adapted to;
(1) issue an endpoint signal when the process variable is indicative of an endpoint of the process; and
(2) determine if the endpoint signal is true or false by evaluating the process parameter. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. An endpoint detection apparatus for detecting an endpoint of a process performed in a substrate processing chamber with an energized gas, the apparatus comprising:
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(a) one or more detectors to detect;
(1) a process variable of the process, the process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (ii) a reflected power level of the energized gas, and (iv) a temperature in the chamber, and (2) a process parameter of the process, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a gas pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position; and
(b) a controller adapted to;
(1) issue an endpoint signal when the process variable is indicative of an endpoint of the process, (2) evaluate the process parameter to set a fault flag if the process parameter does not correspond to a predetermined value or is in a range of predetermined values, and (3) determine the endpoint signal to be (i) false if the endpoint signal is issued and the fault flag is set, or (ii) true if the endpoint signal is issued and the fault flag is not set. - View Dependent Claims (23, 24, 25)
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26. An endpoint detection apparatus for detecting an endpoint of a process performed in a substrate processing chamber with an energized gas, the apparatus comprising:
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(a) one or more detectors to detect;
(1) an intensity of (i) a radiation from the energized gas, or (ii) a radiation reflected from a substrate in the chamber, and (2) a process parameter of the process performed in the chamber; and
(b) a controller adapted to;
(1) determine if the intensity of the radiation corresponds to a first value or is in a first range of values, (2) determine if the process parameter is in a second range of values corresponding to a response coefficient in the equation;
where R is an RF power applied to the energized gas, P is a pressure of the gas in the chamber, F1, F2, and F3 are gas flow rates, and AR, AP, AF1, AF2,and AF3 are their respective response coefficients, and(3) determine if an endpoint of the process is reached when the radiation intensity is the first value or is in the first range of values, and the process condition is in the second range of values. - View Dependent Claims (27, 28, 29, 30)
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Specification