Topographically aligned layers and method for adjusting the relative alignment of layers and apparatus therefor
First Claim
Patent Images
1. An alignment method comprising:
- detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein adjusting the apparent location of the metrology mark adjusts for optical horizontal shift.
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Abstract
Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.
76 Citations
20 Claims
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1. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein adjusting the apparent location of the metrology mark adjusts for optical horizontal shift.
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2. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein determining the apparent location of the metrology mark is determined by determining a topological variation in a topology of the another layer relative to the topology of the at least one layer, wherein adjusting the apparent location of the metrology mark adjusts for topological horizontal shift.
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3. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein adjusting the apparent location of the metrology mark includes an adjustment for at least one predetermined factor.
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4. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein adjusting the apparent location of the metrology mark includes an adjustment for at least one non-predetermined factor.
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5. An apparatus for aligning comprising:
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a detector for detecting a topology of at least one layer to determine an apparent location of a metrology mark, the apparent location of the metrology mark being offset from the actual position of the metrology mark by a distortion amount; and
a mask which is aligned according to the apparent location and adjustment information, wherein the adjustment information is corresponds to the distortion amount. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein the another layer is formed on the at least one layer, wherein determining the apparent location of the metrology mark is determined optically, and wherein adjusting the apparent location of the metrology mark adjusts for optical horizontal shift.
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13. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein the another layer is formed on the at least one layer, wherein determining the apparent location of the metrology mark is determined by determining a topological variation in a topology of the another layer relative to the topology of the at least one layer, and wherein adjusting the apparent location of the metrology mark adjusts for topological horizontal shift. - View Dependent Claims (14)
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15. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein the another layer is formed on the at least one layer, wherein adjusting the apparent location of the metrology mark includes an adjustment for at least one predetermined factor. - View Dependent Claims (16, 17)
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18. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusted location of the metrology mark, wherein the another layer is formed on the at least one layer, wherein adjusting the apparent location of the metrology mark includes an adjustment for at least one non-predetermined factor.
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19. An alignment method comprising:
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detecting a topology of at least one layer;
determining an apparent location of a metrology mark;
adjusting the apparent location of the metrology mark to determine an adjusted location of the metrology mark; and
aligning another layer according to the adjusting location of the metrology mark, wherein the another layer is formed on the at least one layer, wherein the apparent location of the metrology mark is offset from the adjusted location of the metrology mark by a distortion amount. - View Dependent Claims (20)
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Specification