Glass frit bond line

• US 6,815,071 B2
• Filed: 01/24/2003
• Issued: 11/09/2004
• Est. Priority Date: 01/24/2003
• Status: Expired due to Term

• Current Assignee: Delphi Technologies Ip Limited (BorgWarner Incorporated)
• Original Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Inventors: Baney, William J., Hude, Heather, Baney, Brenda Biser
• Primary Examiner(s): Jones, Deborah
• Assistant Examiner(s): XU, LING X
• Application Number:
  US10/248,503
• Publication Number:
  US 20040146719A1
• Time in Patent Office: 655 Days
• Field of Search: 428/426, 428/432, 428/446, 428/689, 428/702, 428/704, 501/15, 501/22, 501/23
• US Class Current: 428/426
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: C03C 17/02 with glass C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/04 by fritting glass powder
• CPC Class Codes: C03C 8/08 containing phosphorus
• CPC Class Codes: C03C 8/10 containing lead
• CPC Class Codes: C04B 2237/10 Glass interlayers, e.g. frit or flux
• CPC Class Codes: C04B 2237/30 Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
• CPC Class Codes: C04B 37/025 consisting of glass or ceramic material

Abstract

A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.

Claims

1. A bond line bonding a device chip to a capping chip, the bond line consisting essentially of a lead-containing glass material, the bond line having an outer exposed surface defined at least in part by a coating comprising lead phosphate.

2. The bond line according to claim 1, wherein the glass material consists of lead oxide and at least one material chosen from the group consisting of boron oxide, silicon dioxide, aluminum oxide, titanium oxide, cupric oxide, manganous oxide, calcia, lithium oxide, ceria, and cobaltous carbonate.

3. The bond line according to claim 1, wherein the bond line is on a semiconductor wafer.

4. The bond line according to claim 1, wherein the bond line hermetically seals a cavity defined by and between the device chip and the capping chip.

5. The bond line according to claim 1, wherein the coating completely defines the other exposed surface of the bond line and the lead phosphate is present in the coating in an amount sufficient to prevent lead within the bond line from reacting with moisture.

6. A bond line bonding a device chip to a capping chip, the bond line consisting essentially of a glass material consisting of a lead oxide and at least one material chosen from the group consisting of boron oxide, silicon dioxide, aluminum oxide, titanium oxide, cupric oxide, manganous oxide, calcia, lithium oxide, ceria, and cobaltous carbonate, the bond line having an outer surface completely covered by a lead phosphate coating.

7. The bond line according to claim 6, wherein the bond line hermetically seals a cavity defined by and between the device chip and the capping chip.

8. The bond line according to claim 7, wherein the cavity contains a microelectromechanical device.

9. The bond line according to claim 6, wherein the device chip has aluminum metallization contacting the bond line.