Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

• US 6,815,228 B2
• Filed: 03/05/2001
• Issued: 11/09/2004
• Est. Priority Date: 06/20/2000
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): Umez-Eronini, Lynette T.
• Application Number:
  US09/797,601
• Publication Number:
  US 20020009814A1
• Time in Patent Office: 1,345 Days
• Field of Search: 438/14, 438/16, 438/710, 438/6
• US Class Current: 438/14
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

Claims

1. A film thickness measuring method for measuring a film thickness of a member to be processed, comprising the steps of:

a) setting a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

b) measuring an intensity of an interference light for each of multiple wavelengths of a second member being processed, composed just like said first member, to obtain a real pattern consisting of time differential values of measured interference light intensities; and

c) obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values.

2. The film thickness measuring method according to claim 1, wherein said step c) compares a time differential pattern having at least three wavelength ranges set so as to correspond to a film thickness with a criterion value so that said film thickness of said second member to be processed is obtained, when said time differential pattern having at least three wavelength ranges reaches said criterion value.

3. A processing method for a member to be processed, comprising the steps of:

setting a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

measuring an intensity of an interference light for each of multiple wavelengths of a second member being processed, composed just like said first member, with respect to each of the multiple wavelengths so as to obtain a real pattern consisting of time differential values of the measured interference light intensities;

obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values; and

performing the next processing according to the film thickness of said second member obtained.

4. A method for etching a member to be processed, placed on a sample stand by plasma in a vacuum chamber, comprising the steps of:

setting a standard pattern consisting of time differential values of interference lights of multiple wavelengths with respect to a film thickness of a first member to be processed;

measuring an intensity of an interference light of multiple wavelengths of a second member being processed, composed Just like said first member, with respect to each of the multiple wavelengths so as to obtain a real pattern consisting of time differential values of the measured interference light Intensities;

obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values; and

etching said second member while controlling etching conditions according to the film thickness of said second member obtained.

5. A method for measuring a film thickness of a member to be processed, comprising the steps of:

setting a standard pattern of time differential values of a wavelength at a zero-cross point and at least one more wavelength of an interference light with respect to a film thickness of a first member to be processed;

measuring the intensity of an interference light of a second member being processed, composed just like said first member, with respect to each of a plurality of wavelengths so as to obtain a wavelength at a zero-cross point in a real pattern of a time differential value of the measured interference light intensity and a time differential value of a real pattern in at least one more wavelength; and

obtaining a film thickness of said second member according to matching of a wavelength at said zero-cross point between said standard pattern and said real pattern of said time differential value and according to matching with a time differential value of at least one more wavelength.

6. A method for measuring a film thickness of a member to be processed, comprising the steps of:

setting a standard waveform pattern or a zero-cross waveform pattern of a time differential value of an interference light with respect to a film thickness of a first member to be processed and with respect to each of a plurality of wavelengths;

measuring the intensity of an interference light of a second member being processed, composed just like said first member, with respect to each of a plurality of wavelengths so as to obtain an actual waveform pattern or zero-cross waveform pattern of a time differential value of each wavelength of the measured Interference light intensity; and

comparing said standard pattern with said actual pattern so as to obtain a film thickness of said second member.

7. A method for measuring a film thickness of a member to be processed, comprising the steps of:

selecting specific wavelengths of an interference light of a second member to be processed, as guide and target wavelengths;

obtaining a film thickness range of said second member from a guide wavelength time differential value zero-cross pattern of an interference light of a first member being processed, composed just like said second member, according to said guide wavelength with respect to a film thickness; and

obtaining a film thickness of said second member within said film thickness range from a zero-cross waveform pattern of said time differential value of said interference light intensity having said target wavelength.