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Method for forming a thin film using an atomic layer deposition (ALD) process

  • US 6,815,350 B2
  • Filed: 03/05/2003
  • Issued: 11/09/2004
  • Est. Priority Date: 03/05/2002
  • Status: Expired due to Term
First Claim
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1. A method for forming a thin film for a semiconductor device using an atomic deposition process, comprising:

  • (a) supplying a first reactive material and a second reactive material to a chamber having a wafer therein, thereby adsorbing the first reative material and the second reactive material on a surface of the wafer;

    (b) supplying a first gas to the chamber to purge the first reactive material and the second reactive material that remain unreacted;

    (c) supplying a third reactive material to the chamber, thereby causing a reaction between the first and second materials and the third reactive material to form a monolayer of the thin film;

    (d) supplying a second gas to the chamber to purge the third reactive material that remains unreacted in the chamber and a byproduct; and

    (e) repeating (a) through (d) for forming the monolayer of the thin film a predetermined number of times to form a SiBN ternary thin film having a predetermined thickness on the wafer.

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