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Process for improving the etch stability of ultra-thin photoresist

  • US 6,815,359 B2
  • Filed: 03/28/2001
  • Issued: 11/09/2004
  • Est. Priority Date: 03/28/2001
  • Status: Active Grant
First Claim
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1. A method of increasing an etch stability of a photoresist layer, the method comprising the steps of:

  • providing the photoresist layer at a thickness less than 0.25 μ

    m, for use in vacuum ultraviolet lithography, deep ultraviolet lithography, or extreme ultraviolet lithography;

    exposing the photoresist layer to a plasma, the photoresist layer including exposed surfaces; and

    transforming the exposed surfaces to form a shell before using the photoresist layer to etch an underlying layer, wherein the shell increases the etch stability of the photoresist layer.

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