Plasma etching apparatus and plasma etching method

• US 6,815,365 B2
• Filed: 10/26/2001
• Issued: 11/09/2004
• Est. Priority Date: 03/16/1995
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Takahashi, Kazue, Masuda, Toshio, Suehiro, Mitsuru, Kanai, Saburo, Kaji, Tetsunori
• Primary Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US09/983,946
• Publication Number:
  US 20020042206A1
• Time in Patent Office: 1,110 Days
• Field of Search: 438/706, 438/707, 438/710, 438/714, 438/723, 156/345, 215/67-69
• US Class Current: 438/710
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32504 Means for preventing sputtering of the vessel
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Claims

1. A plasma processing method for processing a sample of one lot of a plurality of samples placed in a processing chamber by using plasma formed within an inner wall constituting at least a part of the processing chamber, the method comprising the steps of:

processing the samples of the lot while changing a temperature on at least a surface of the inner wall of the processing chamber upon processing of the samples at an initial stage of the lot so that the temperature on at least the surface of the inner wall of the processing chamber is not maintained at a substantially constant temperature upon processing of the samples at the initial stage of the lot.

2. A plasma processing method as defined in claim 1, wherein the temperature on at least the surface of the inner wall of the processing chamber is controlled by a temperature controller.

3. A plasma processing method as defined in claim 1, wherein the inner wall is an exchangeable member which is a cylindrical, the samples of the lot being processed while changing the temperature on an inside surface of the exchangeable cylindrical member.

4. A plasma processing method as defined in claim 1, further comprising the step of controlling the temperature on at least the surface of the inner wall of the processing chamber to a predetermined initial temperature before starting the processing of the samples of the lot.

5. A plasma processing method as defined in claim 2, further comprising the step of controlling the temperature on at least the surface of the inner wall of the processing chamber to a predetermined initial temperature before starting the processing of the samples of the lot.

6. A plasma processing method as defined in claim 3, further comprising the step of controlling the temperature on at least the surface of the inner wall of the processing chamber to a predetermined initial temperature before starting the processing of the samples of the lot.

7. A plasma processing method as defined in claim 1, wherein the samples are processed by controlling the temperature on at least the surface of the inner wall of the processing chamber in accordance with a predetermined temperature pattern providing different set temperatures as the processing of the samples at the initial stage of the lot progresses.

8. A plasma processing method as defined in claim 7, further comprising the step of controlling the temperature on at least the surface of the inner wall of the processing chamber to a predetermined initial temperature before starting the processing of the samples of the lot.

9. A plasma processing method as defined in claim 1, wherein the samples are processed by controlling the temperature on at least an inner surface of the inner wall of the processing chamber, the inner wall being an exchangeable member.

10. A plasma processing method as defined in claim 9, further comprising the step of controlling the temperature on at least the inner surface of the inner wall of the processing chamber to a predetermined initial temperature before starting the processing of the samples of the lot.