Structure having flush circuitry features and method of making
First Claim
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1. A structure having first and second major surfaces comprising:
- a carrier foil forming a first said major surface;
an electrically conductive layer on one of the major surfaces of the carrier foil;
a dielectric layer located on the electrically conductive layer wherein the dielectric layer having circuitry features; and
plated metal conductive circuitry located within the circuitry features wherein the metal conductive circuitry is substantially flush/coplanar with and surrounded by the dielectric layer, wherein said flush metal conductive circuitry forms interconnects from any via in the structure to any other via in the structure; and
wherein said metal/dielectric co-plane forms said second major surface.
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Abstract
Embedded flush circuitry features are provided by providing a carrier foil having an electrically conductive layer therein and coating the electrically conductive layer with a dielectric material. Circuitry features are formed in the dielectric material and conductive metal is plated to fill the circuitry features.
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Citations
29 Claims
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1. A structure having first and second major surfaces comprising:
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a carrier foil forming a first said major surface;
an electrically conductive layer on one of the major surfaces of the carrier foil;
a dielectric layer located on the electrically conductive layer wherein the dielectric layer having circuitry features; and
plated metal conductive circuitry located within the circuitry features wherein the metal conductive circuitry is substantially flush/coplanar with and surrounded by the dielectric layer, wherein said flush metal conductive circuitry forms interconnects from any via in the structure to any other via in the structure; and
wherein said metal/dielectric co-plane forms said second major surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A structure, having first and second external major surfaces, comprising:
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a stiffening dielectric base layer having first and second buried major surfaces;
a first circuitry layer located on said first buried major surface;
a second circuitry layer located on said second buried major surface;
each said circuitry layer further comprising;
a layer of a patterned dielectric material having circuitry features defined therein;
and plated metal conductive circuitry located within the circuitry features wherein the metal conductive circuitry is substantially flush/coplanar with and surrounded by said patterned dielectric layer, wherein said flush metal conductive circuitry forms interconnects from any via in the structure to any other via in the structure; and
wherein said metal circuitry/dielectric co-plane form at least one of said external major surfaces.- View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A structure comprising a dielectric base layer;
- a second dielectric layer containing circuitry features located upon the base dielectric layer; and
metal conductive circuitry located within the circuitry features wherein the metal conductive circuitry is substantially flush/coplanar with and surrounded by the second dielectric layer;wherein the conductive circuitry comprises lines of about 0.5 to about 1 mil wide and being about 0.5 to about 3 mils spaced apart and circuit features of sufficient size to permit an electronic component to be located in said structure, wherein said flush metal conductive circuitry forms interconnects from any via in the structure to any other via in the structure. - View Dependent Claims (28, 29)
wherein gold wire bond attach exists between gold covered circuitry and said integrated circuit chip.
- a second dielectric layer containing circuitry features located upon the base dielectric layer; and
Specification