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Field effect transistor with channel extending through layers on a substrate

  • US 6,815,750 B1
  • Filed: 05/22/2002
  • Issued: 11/09/2004
  • Est. Priority Date: 05/22/2002
  • Status: Expired due to Fees
First Claim
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1. A field effect transistor comprising, in combination:

  • a) a substrate having a substantially-planar upper substrate surface;

    b) an elongated channel of semiconductor material;

    c) said channel including a top and a bottom with the bottom of the channel contacting said upper substrate surface;

    d) said substrate being substantially conductive in the region contacting said bottom of said elongated channel;

    e) said channel including a heavily doped region adjacent the top thereof; and

    f) a gate comprising a planar layer of conductive material arranged substantially parallel to said upper substrate surface, wherein the planar layer comprises a pore through which the elongated channel extends.

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