Structure for scalable, low-cost polysilicon DRAM in a planar capacitor
First Claim
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1. A structure formed on a semiconductor, substrate comprising:
- a plurality of isolation filled trenches in a first region of the substrate;
at least two adjacent memory cells comprising a plurality of holes in the substrate, each of said holes having a plurality of sidewalls and a bottom wall, said adjacent memory cells located in a second region of the semiconductor substrate in which said plurality of isolation filled trenches are absent, said holes having a depth proximate that of said plurality of isolation filled trenches;
insulating material present in each of said plurality of holes on said plurality of sidewalls and bottom wall; and
a conductor overfilling each of said holes and extending onto an adjacent upper surface of the substrate;
wherein said adjacent memory cells are electrically isolated by said plurality of holes.
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Abstract
Capacitor structures that have increased capacitance without compromising cell area are provided as well as methods for fabricating the same. A first capacitor structure includes insulating material present in holes that are formed in a semiconductor substrate, where the insulating material is thicker on the bottom wall of each capacitor hole as compared to the sidewalls of each hole. In another capacitor structure, deep capacitor holes are provided that have an isolation implant region present beneath each hole.
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Citations
10 Claims
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1. A structure formed on a semiconductor, substrate comprising:
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a plurality of isolation filled trenches in a first region of the substrate;
at least two adjacent memory cells comprising a plurality of holes in the substrate, each of said holes having a plurality of sidewalls and a bottom wall, said adjacent memory cells located in a second region of the semiconductor substrate in which said plurality of isolation filled trenches are absent, said holes having a depth proximate that of said plurality of isolation filled trenches;
insulating material present in each of said plurality of holes on said plurality of sidewalls and bottom wall; and
a conductor overfilling each of said holes and extending onto an adjacent upper surface of the substrate;
wherein said adjacent memory cells are electrically isolated by said plurality of holes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification