Power semiconductor component, IGBT and field-effect transistor
First Claim
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1. A power semiconductor component, comprising:
- a semiconductor body having a surface with a trench formed therein, said trench having a lower region;
an electrode device provided in said trench and having two electrodes electrically isolated from one another;
a first semiconductor zone of a first conductivity type, adjoining said trench, and having a metallization provided on said surface of said semiconductor body;
a second semiconductor zone of said first conductivity type and adjoining said lower region of said trench; and
a third semiconductor zone of a second conductivity type opposite to said first conductivity type, adjoining said trench, and separating said first semiconductor zone from said second semiconductor zone.
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Abstract
A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.
41 Citations
28 Claims
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1. A power semiconductor component, comprising:
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a semiconductor body having a surface with a trench formed therein, said trench having a lower region;
an electrode device provided in said trench and having two electrodes electrically isolated from one another;
a first semiconductor zone of a first conductivity type, adjoining said trench, and having a metallization provided on said surface of said semiconductor body;
a second semiconductor zone of said first conductivity type and adjoining said lower region of said trench; and
a third semiconductor zone of a second conductivity type opposite to said first conductivity type, adjoining said trench, and separating said first semiconductor zone from said second semiconductor zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
said trench has a bottom; and
said first of said electrode extends as far as said bottom of said trench.
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5. The power semiconductor component according to claim 1, wherein said first semiconductor zone adjoins said surface.
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6. The power semiconductor component according to claim 1, wherein said semiconductor body has a further surface opposing said surface of said semiconductor body;
- a further metallization provided on said further surface.
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7. The power semiconductor component according to claim 1, wherein said two electrodes of said electrode device are mutually adjacent.
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8. The power semiconductor component according to claim 1, wherein:
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said semiconductor body has an intercell region; and
a first of said electrodes of said electrode device is contacted to said metallization and includes a section overlapping said intercell region.
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9. The power semiconductor component according to claim 8, wherein said first of said electrodes is connected to said metallization in said intercell region.
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10. The power semiconductor component according to claim 1, further comprising a gate connection being connected to a first of said electrodes of said electrode device;
- a second of said electrodes being connected to said metallization;
said first of said electrodes including a section at least partially overlapping said second of said electrodes.
- a second of said electrodes being connected to said metallization;
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11. The power semiconductor component according to claim 1, wherein:
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said semiconductor body has an intercell region; and
said electrode device is at least partly configured in step form over said intercell region.
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12. The power semiconductor component according to claim 1, wherein said trench and said electrode device have a strip structure.
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13. The power semiconductor component according to claim 12, wherein:
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said strip structure has a strip end; and
a gate connection is disposed at said strip end.
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14. The power semiconductor component according to claim 1, wherein said trench and said electrode device laterally surround said third semiconductor zone.
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15. The power semiconductor component according to claim 14, wherein said third semiconductor zone has a polygon shape when seen from above.
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16. The power semiconductor component according to claim 15, wherein said polygon shape is selected from the group consisting of a square and a hexagon.
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17. The power semiconductor component according to claim 1, wherein said semiconductor body has an intercell region with a floating region.
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18. The power semiconductor component according to claim 17, wherein said floating region has said second conductivity type.
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19. The power semiconductor component according to claim 1, wherein said semiconductor body has an intercell region and a further trench in said intercell region.
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20. The power semiconductor component according to claim 1, further comprising a connection separate from a gate connection and said metallization and connected to one of said electrodes of said electrode device.
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21. The power semiconductor component according to claim 1, further comprising an insulation layer isolating said electrodes of said electrode device and being selected from the group consisting of silicon dioxide, silicon nitride, and a plurality of films with at least one of said films being silicon nitride.
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22. The power semiconductor component according to claim 1, wherein:
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said semiconductor body has an intercell region;
a first of said electrodes has a width; and
said trench forms a wide trench spanning said intercell region and having a width greater than said first of said electrodes.
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23. The power semiconductor component according to claim 6, wherein at least one of said metallization is made of aluminum.
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24. The power semiconductor component according to claim 1, wherein said metallization is made of aluminum.
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25. The power semiconductor component according to claim 1, wherein said electrode device is made of polycrystalline silicon.
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26. An IGBT, comprising:
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A semiconductor body having a surface with a trench formed therein, said trench having a lower region;
an electrode device provided in said trench and having two electrodes electrically isolated from one another;
a first semiconductor zone of a first conductivity type, adjoining said trench, and having a metallization provided on said surface of said semiconductor body;
a second semiconductor zone of said first conductivity type and adjoining said lower region of said trench; and
a third semiconductor zone of a second conductivity type opposite to said first conductivity type, adjoining said trench, and separating said first semiconductor zone from said second semiconductor zone.
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27. An IEBT, comprising:
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a semiconductor body having a surface with a trench formed therein, said trench having a lower region;
an electrode device provided in said trench and having two electrodes electrically isolated from one another;
a first semiconductor zone of a first conductivity type, adjoining said trench, and having metallization provided on said surface of said semiconductor body;
a second semiconductor zone of said first conductivity type and adjoining said lower region of said trench; and
a third semiconductor zone of a second conductivity type opposite to said first conductivity type, adjoining said trench, and separating said first semiconductor zone from said second semiconductor zone.
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28. A field-effect transistor, comprising:
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a semiconductor body having a surface with a trench formed therein, said trench having a lower region;
an electrode device provided in said trench and having two electrodes electrically isolated from one another;
a first semiconductor zone of a first conductivity type, adjoining said trench, and having a metallization provided on said surface of said semiconductor body;
a second semiconductor zone of said first conductivity type and adjoining said lower region of said trench; and
a third semiconductor zone of a second conductivity type opposite to said first conductivity type, adjoining said trench, and separating said first semiconductor zone from said second semiconductor zone.
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Specification