RF power amplifier and method for packaging the same

• US 6,816,011 B2
• Filed: 05/30/2003
• Issued: 11/09/2004
• Est. Priority Date: 09/12/2000
• Status: Expired due to Term

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: Paul, Susanne A., Dupuis, Timothy J.
• Primary Examiner(s): Shingleton, Michael B
• Application Number:
  US10/448,963
• Publication Number:
  US 20030206058A1
• Time in Patent Office: 529 Days
• Field of Search: 257/778, 257/159, 257/700, 257/204, 257/379, 257/516, 257/528, 257/904, 257/678, 438/108, 438/128, 438/129, 438/200, 438/210, 330/277, 330/264, 330/252, 327/563, 323/272
• US Class Current: 330/252
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03F 1/02 Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/391 the output circuit of an amplifying stage comprising an LC-network
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/2171 with field-effect devices H03F3/2173 - H03F3/2178 take precedence
• CPC Class Codes: H03F 3/2173 of the bridge type
• CPC Class Codes: H03F 3/2176 : Class E amplifiers
• CPC Class Codes: H03F 3/24 : of transmitter output stages
• CPC Class Codes: H03F 3/30 : Single-ended push-pull [SEPP] amplifiers single-ended sense amplifiers G11C7/067; Phase-splitters therefor
• CPC Class Codes: H03F 3/45179 : using MOSFET transistors as the active amplifying circuit H03F3/45278 takes precedence
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H03K 17/04163 : in field-effect transistor switches
• CPC Class Codes: H03K 17/6872 : using complementary field-effect transistors
• CPC Class Codes: Y10S 257/904 : with passive components,, e.g. polysilicon resistors

Abstract

A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Claims

1. An RF power amplifier suitable for transmitting signals in a cellular telephone system comprising:

a complimentary metal-oxide semiconductor (CMOS) device;

a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein the top conductive layer is connected to the CMOS device, wherein the ceramic chip carrier includes a plurality of connection points adapted to be mounted to a printed circuit board, and wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;

one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more signal inputs of the CMOS device, wherein the one or more signal paths extend through all of the conductive layers of the ceramic chip carrier; and

a plurality of RF amplifier stages, wherein each of the

plurality of RF amplifier stages further comprises;

a first portion having one or more CMOS switching devices implemented in the CMOS device; and

a second portion having one or more passive elements implemented in the ceramic chip carrier using at least one of said one or more middle conductive layers.

2. The RF power amplifier of claim 1, wherein said second portion of the RF power amplifier includes one or more inductors.

3. The RF power amplifier of claim 1, wherein said first portion of the RF power amplifier includes one or more capacitors.

4. The RF power amplifier of claim 1, wherein said second portion of the RF power amplifier includes one or more transformers.

5. The RF power amplifier of claim 1, wherein said first and second portions of the RF power amplifier are designed for operation at frequencies greater than 800 MHz.

6. The RF power amplifier of claim 1, wherein all switching devices within said RF power amplifier are CMOS transistor elements.

7. The RF power amplifier of claim 1, wherein the power amplifier is a GSM power amplifier.

8. The RF power amplifier of claim 1, wherein sand second portion of the RF power amplifier includes a vertically formed inductor having a loop oriented perpendicular to the layers of the ceramic chip carrier.

9. The RF power amplifier of claim 8, wherein the vertically formed inductor further comprises a first via extending into the ceramic chip carrier, a second via extending into the ceramic chip carrier, and a conductive strip connecting the first and second vias.

10. The RF power amplifier of claim 1, wherein the CMOS device includes a plurality of bumps for connection to the ceramic chip carrier, and wherein a transistor is formed directly below at least one of the bumps in the flip chip semiconductor device.

35. The RF power amplifier of claim 1, wherein the connection points are adapted to be mounted to the printed circuit board by soldering the connection points to the printed circuit board.

36. The RF power amplifier of claim 1, further comprising:

an output matching network, the output matching network further comprising;

one or more inductive elements formed in the ceramic chip carrier, and

one or more capacitive elements; and

wherein each of the plurality of RF amplifier stages further comprises;

one or more inductive elements formed in the ceramic chip carrier,

one or more capacitive elements formed in the CMOS device, and

one or more switching devices formed in the CMOS device.

11. A method of amplifying signal for a cellular telephone system comprising the steps of:

packaging together a complimentary metal-oxide semiconductor (CMOS) device and a ceramic chip carrier to form an RF power amplifier;

providing a plurality of conductive layers on the ceramic chip carrier and connecting a top conductive layer to the CMOS device;

providing a plurality of connection points on the ceramic chip carrier adapted to be mounted to a printed circuit board;

forming one or more signal paths between one or more of the connections points of the ceramic chip carrier and one or more inputs of the CMOS device, wherein the one or more signal paths extend through all of the conductive layers of the ceramic chip carrier;

providing a plurality of RF amplifier stages, each stage having one or more signal inputs to the CMOS device which extend through all of the conductive layers of the ceramic chip carrier; and

for each of the amplifier stages, providing a first portion having one or more CMOS switching devices implemented in the CMOS device and a second portion having one or more passive elements implemented in the ceramic chip carrier using at least one of said conductive layers.

12. The method of claim 11, wherein the second portion of the RF power amplifier is provided with one or more inductors.

13. The method of claim 11, wherein the first portion of the RF power amplifier is provided with one or more capacitors.

14. The method of claim 11, wherein the second portion of the RF power amplifier is provided with one or more transformers.

15. The method of claim 11, further comprising the step of forming a vertical inductor having a loop oriented perpendicular to the ceramic chip carrier.

16. The method of claim 15, wherein the vertical inductor is formed by providing a first via extending into the ceramic chip carrier, providing a second via extending into the ceramic chip carrier, and connecting a conductive strip between the first and second vias.

37. The method of claim 11, further comprising:

providing an output matching network, wherein the output matching network includes one or more inductive elements in the ceramic chip carrier and one or more capacitive elements;

and

wherein each of the plurality of RF amplifier stages is provided by;

forming one or more inductive elements in the ceramic chip carrier,

forming one or more capacitive elements in the CMOS device, and

forming one or more switching devices in the CMOS device.

17. An RF power amplifier suitable for transmitting signals in a cellular telephone system comprising:

a complimentary metal-oxide semiconductor (CMOS) device having a plurality of conductive bumps for connection to a carrier;

a ceramic chip carrier having a plurality of connection points, wherein the plurality of connection points are adapted to mount to a printed circuit board, wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;

one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more conductive bumps of the CMOS device, wherein the one or more signal paths extend through the ceramic chip carrier;

a plurality of transistors implemented in the CMOS device, wherein at least one of the transistors is a power transistor and is formed directly below one of the conductive bumps to minimize the resulting resistance and inductance; and

a plurality of passive elements implemented in the ceramic chip carrier.

18. The RF power amplifier of claim 17, wherein the RF power amplifier includes a plurality of stages.

19. The RF power amplifier of claim 17, wherein the RF power amplifier has a first portion having one or more CMOS switching devices implemented in the CMOS device and a second portion having one or more passive elements implemented in the ceramic chip carrier.

33. The RF power amplifier of claim 17, wherein the connection points are formed on a bottom surface of the ceramic chip carrier.

34. The RF power amplifier of claim 17, wherein the connection points are adapted to be mounted to the printed circuit board by soldering the connection points to the printed circuit board.

38. The RF power amplifier of claim 17, further comprising:

an output matching network, the output matching network further comprising;

one or more inductive elements formed in the ceramic chip carrier, and

one or more capacitive elements; and

a plurality of RF amplifier stages, wherein each of the plurality of RF power amplifier stages further comprises;

one or more inductive elements formed in the ceramic chip carrier,

one or more capacitive elements formed in the CMOS device, and

one or more switching devices formed in the CMOS device.

20. An RF power amplifier for transmitting signals at power levels suitable for a cellular telephone system comprising:

a complimentary metal-oxide semiconductor (CMOS) device;

a ceramic chip carrier having an upper surface connected to the CMOS device and having a lower surface with a plurality of connection points adapted to be soldered directly to a printed circuit board; and

a plurality of tuned RF amplifier stages, each of the plurality of tuned RF amplifier stages further comprising;

one or more inductive elements formed in the ceramic chip carrier,

one or more capacitive elements formed in the CMOS device, and

one or more switching devices formed in the CMOS device; and

an output matching network, the output matching network further comprising;

one or more inductive elements formed in the ceramic chip carrier, and

one or more capacitive elements.

21. The RF power amplifier of claim 20, further comprising one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more inputs of the CMOS device, wherein the one or more signal paths extend through the ceramic chip carrier.

22. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:

a complimentary metal-oxide semiconductor (CMOS) device;

a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein the top conductive layer is connected to the CMOS device and the bottom conductive layer is adapted to be connected to a printed circuit board, and wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;

a plurality of tuned RF amplifier stages, each of the plurality of tuned RF amplifier stages further comprising;

one or more inductive elements formed in the ceramic chip carrier.

one or more capacitive elements formed in the CMOS device, and

one or more switching devices formed in the CMOS device; and

an output matching network, the output matching network further comprising;

one or more inductive elements formed in the ceramic chip carrier, and

one or more capacitive elements.

23. The RF power amplifier of claim 22, wherein the capacitive elements from each amplifier stage are formed from the active switching elements from each stage.

24. The RF power amplifier of claim 22, wherein the inductive elements in the output matching network include one or more transformers.

25. The RF power amplifier of claim 22, further comprising one or more tuned amplifier stages, each tuned amplifier stage having an inductive element built in the CMOS device.

26. The RF power amplifier of claim 22, wherein the inductive elements from the tuned amplifier stages are formed as vertical inductors having a loop oriented perpendicular to the layers of the ceramic chip carrier.

27. The RF power amplifier of claim 22, wherein the inductive elements from the output matching network are formed as vertical inductors having a loop oriented perpendicular to the layers of the ceramic chip carrier.

28. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:

a complimentary metal-oxide semiconductor (CMOS) device;

a ceramic chip carrier, the ceramic chip carrier further comprising;

an upper surface, wherein the upper surface is connected to the CMOS device,

one or more conductive layers, and

a bottom surface having a plurality of connection points adapted to be mounted directly to a printed circuit board, wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier; and

a plurality of tuned RF amplifier stages, each tuned RF amplifier stage further comprising;

one or more inductive elements formed in the ceramic chip carrier,

one or more capacitive elements formed in the CMOS device, and

one or more switching devices formed in the CMOS device.

29. The RF power amplifier of claim 28, wherein the ceramic chip carrier is adapted to be mounted to a printed circuit board by soldering the connection points to the printed circuit board.

30. The RF power amplifier of claim 28, further comprising a vertically formed inductor is formed on the ceramic chip carrier, wherein the vertically formed inductor has a loop oriented perpendicular to the layers of the ceramic chip carrier.

31. The RF power amplifier of claim 30, wherein the vertically formed inductor further comprises a first via extending into the ceramic chip carrier, a second via extending into the ceramic chip carrier, and a conductive strip connecting the first and second vias.

32. The RF power amplifier of claim 28, wherein the RF power amplifier is a GSM power amplifier.