RF power amplifier and method for packaging the same
First Claim
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1. An RF power amplifier suitable for transmitting signals in a cellular telephone system comprising:
- a complimentary metal-oxide semiconductor (CMOS) device;
a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein the top conductive layer is connected to the CMOS device, wherein the ceramic chip carrier includes a plurality of connection points adapted to be mounted to a printed circuit board, and wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;
one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more signal inputs of the CMOS device, wherein the one or more signal paths extend through all of the conductive layers of the ceramic chip carrier; and
a plurality of RF amplifier stages, wherein each of the plurality of RF amplifier stages further comprises;
a first portion having one or more CMOS switching devices implemented in the CMOS device; and
a second portion having one or more passive elements implemented in the ceramic chip carrier using at least one of said one or more middle conductive layers.
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Abstract
A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.
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Citations
38 Claims
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1. An RF power amplifier suitable for transmitting signals in a cellular telephone system comprising:
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a complimentary metal-oxide semiconductor (CMOS) device;
a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein the top conductive layer is connected to the CMOS device, wherein the ceramic chip carrier includes a plurality of connection points adapted to be mounted to a printed circuit board, and wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;
one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more signal inputs of the CMOS device, wherein the one or more signal paths extend through all of the conductive layers of the ceramic chip carrier; and
a plurality of RF amplifier stages, wherein each of the plurality of RF amplifier stages further comprises;
a first portion having one or more CMOS switching devices implemented in the CMOS device; and
a second portion having one or more passive elements implemented in the ceramic chip carrier using at least one of said one or more middle conductive layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 35, 36)
an output matching network, the output matching network further comprising;
one or more inductive elements formed in the ceramic chip carrier, and one or more capacitive elements; and
wherein each of the plurality of RF amplifier stages further comprises;
one or more inductive elements formed in the ceramic chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device.
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11. A method of amplifying signal for a cellular telephone system comprising the steps of:
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packaging together a complimentary metal-oxide semiconductor (CMOS) device and a ceramic chip carrier to form an RF power amplifier;
providing a plurality of conductive layers on the ceramic chip carrier and connecting a top conductive layer to the CMOS device;
providing a plurality of connection points on the ceramic chip carrier adapted to be mounted to a printed circuit board;
forming one or more signal paths between one or more of the connections points of the ceramic chip carrier and one or more inputs of the CMOS device, wherein the one or more signal paths extend through all of the conductive layers of the ceramic chip carrier;
providing a plurality of RF amplifier stages, each stage having one or more signal inputs to the CMOS device which extend through all of the conductive layers of the ceramic chip carrier; and
for each of the amplifier stages, providing a first portion having one or more CMOS switching devices implemented in the CMOS device and a second portion having one or more passive elements implemented in the ceramic chip carrier using at least one of said conductive layers. - View Dependent Claims (12, 13, 14, 15, 16, 37)
providing an output matching network, wherein the output matching network includes one or more inductive elements in the ceramic chip carrier and one or more capacitive elements;
and wherein each of the plurality of RF amplifier stages is provided by;
forming one or more inductive elements in the ceramic chip carrier, forming one or more capacitive elements in the CMOS device, and forming one or more switching devices in the CMOS device.
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17. An RF power amplifier suitable for transmitting signals in a cellular telephone system comprising:
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a complimentary metal-oxide semiconductor (CMOS) device having a plurality of conductive bumps for connection to a carrier;
a ceramic chip carrier having a plurality of connection points, wherein the plurality of connection points are adapted to mount to a printed circuit board, wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;
one or more signal paths formed between one or more of the connections points of the ceramic chip carrier and one or more conductive bumps of the CMOS device, wherein the one or more signal paths extend through the ceramic chip carrier;
a plurality of transistors implemented in the CMOS device, wherein at least one of the transistors is a power transistor and is formed directly below one of the conductive bumps to minimize the resulting resistance and inductance; and
a plurality of passive elements implemented in the ceramic chip carrier. - View Dependent Claims (18, 19, 33, 34, 38)
an output matching network, the output matching network further comprising;
one or more inductive elements formed in the ceramic chip carrier, and one or more capacitive elements; and
a plurality of RF amplifier stages, wherein each of the plurality of RF power amplifier stages further comprises;
one or more inductive elements formed in the ceramic chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device.
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20. An RF power amplifier for transmitting signals at power levels suitable for a cellular telephone system comprising:
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a complimentary metal-oxide semiconductor (CMOS) device;
a ceramic chip carrier having an upper surface connected to the CMOS device and having a lower surface with a plurality of connection points adapted to be soldered directly to a printed circuit board; and
a plurality of tuned RF amplifier stages, each of the plurality of tuned RF amplifier stages further comprising;
one or more inductive elements formed in the ceramic chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device; and
an output matching network, the output matching network further comprising;
one or more inductive elements formed in the ceramic chip carrier, and one or more capacitive elements. - View Dependent Claims (21)
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22. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:
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a complimentary metal-oxide semiconductor (CMOS) device;
a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein the top conductive layer is connected to the CMOS device and the bottom conductive layer is adapted to be connected to a printed circuit board, and wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier;
a plurality of tuned RF amplifier stages, each of the plurality of tuned RF amplifier stages further comprising;
one or more inductive elements formed in the ceramic chip carrier. one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device; and
an output matching network, the output matching network further comprising;
one or more inductive elements formed in the ceramic chip carrier, and one or more capacitive elements. - View Dependent Claims (23, 24, 25, 26, 27)
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28. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:
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a complimentary metal-oxide semiconductor (CMOS) device;
a ceramic chip carrier, the ceramic chip carrier further comprising;
an upper surface, wherein the upper surface is connected to the CMOS device, one or more conductive layers, and a bottom surface having a plurality of connection points adapted to be mounted directly to a printed circuit board, wherein said CMOS device and said ceramic chip carrier are packaged together to form the RF power amplifier; and
a plurality of tuned RF amplifier stages, each tuned RF amplifier stage further comprising;
one or more inductive elements formed in the ceramic chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device. - View Dependent Claims (29, 30, 31, 32)
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Specification