Apparatus for determining an overlay error and critical dimensions in a semiconductor structure by means of scatterometry

• US 6,816,252 B2
• Filed: 04/29/2002
• Issued: 11/09/2004
• Est. Priority Date: 08/30/2001
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Schulz, Bernd
• Primary Examiner(s): Stafira, Michael P.
• Assistant Examiner(s): VALENTIN, JUAN D
• Application Number:
  US10/134,243
• Publication Number:
  US 20030043372A1
• Time in Patent Office: 925 Days
• Field of Search: 356/399, 356/400, 356/401, 356/636, 430/30, 430/22
• US Class Current: 356/237.5
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

An apparatus for obtaining information on critical dimensions and overlay accuracy of features in a semiconductor structure comprises a light source, a detector and an optical means defining a first optical path and a second optical path. The first optical path and the second optical path are oriented in correspondence with the respective orientations of diffracting patterns provided on the semiconductor structure to obtain the required information without the necessity of rotating the semiconductor structure. This insures a significantly higher throughput.

Claims

1. An apparatus for obtaining information on critical dimensions and overlay accuracy of features formed in a semiconductor structure, wherein the semiconductor structure includes a first diffracting pattern oriented with respect to a first direction and a second diffracting pattern oriented with respect to a second direction, the apparatus comprising:

a light source for emitting at least one light beam;

a first plurality of deflecting elements defining a first optical path in a first plane of incidence corresponding to the first direction, and a second plurality of deflecting elements defining a second optical path in a second plane of incidence corresponding to the second direction;

a detector optically connectable to the first and second optical paths to receive a light beam diffracted by the first and the second diffracting patterns, respectively; and

a first partially reflecting mirror directing a first portion of an incident light beam into the first optical path and directing a second portion of the incident light beam into the second optical path, wherein a common transmittance of the first partially reflecting mirror and of a transmissive element arranged in the second optical path is substantially equal to a reflectivity of the first partially reflecting mirror.

2. The apparatus of claim 1, further comprising first and second actuable deflecting mirrors that are selectively placed in the first and second optical paths, respectively.

3. The apparatus of claim 1, wherein the light source is adapted to emit substantially linearly polarized light.

4. The apparatus of claim 1, wherein the light source is a multi-wavelength light source.

5. The apparatus of claim 1, wherein the light source is adapted to emit a first light beam and a second light beam, the first and second light beams propagating along the first and second optical paths, respectively.

6. The apparatus of claim 1, wherein the detector comprises at least a first and a second detecting portion to simultaneously detect a light beam diffracted by the first and second diffracting patterns.

7. The apparatus of claim 1, wherein the first and second portions of the incident light are substantially equal.

8. The apparatus of claim 1, further comprising an actuator element mechanically coupled to one of the deflecting mirrors to select one of the first and second detecting portions for a light beam propagating along one of the first and the second optical paths.

9. The apparatus of claim 1, wherein the first plurality of deflecting elements comprises at least one reflecting mirror, and wherein the second plurality of deflecting elements comprises at least one reflecting mirror.

10. An apparatus for obtaining information on critical dimensions and overlay accuracy of features formed in a semiconductor structure, wherein the semiconductor structure includes a first diffracting pattern oriented with respect to a first direction and a second diffracting pattern oriented with respect to a second direction, the apparatus comprising:

a light source for emitting at least one light beam;

a first optical path and second optical path;

a detector optically connectable to the first and second optical paths to receive a light beam diffracted by the first and the second diffracting patterns, respectively;

a first optical fiber with a first end thereof optically coupled to the light source to at least partially define said first optical path;

a second optical fiber with a first end thereof optically coupled to the detector to at least partially define said second optical path; and

a switch mechanically coupled to a second end of the first and second optical fibers, respectively;

wherein a first position of the switch defines the first optical path and a second position defines the second optical path.

11. The apparatus of claim 10, wherein the switch comprises a rotary element rotatable in a plane perpendicular to the first and second plane of incidence.

12. An apparatus adapted for obtaining information on critical dimensions and overlay accuracy of features formed in a semiconductor structure, wherein the semiconductor structure includes a first diffracting pattern oriented with respect to a first direction and a second diffracting pattern oriented with respect to a second direction, the apparatus comprising:

means for emitting at least one light beam;

means for defining a first optical path and second optical path;

means for receiving a light beam diffracted by the first and the second diffracting patterns, said means for receiving said light beam comprises a detector optically connectable to the first and second optical path;

a first optical fiber with a first end thereof optically coupled to the means for emitting at least one light beam;

a second optical fiber with a first end thereof optically counted to the detector; and

a switch mechanically coupled to a second end of the first and second optical fibers, respectively, wherein a first position of the switch defines the first optical path and a second position defines the second optical path.

13. The apparatus of claim 12, wherein said means for defining said first optical path and said second optical path comprises at least one optical fiber.

14. The apparatus of claim 12, wherein the switch comprises a rotary element rotatable in a plane perpendicular to the first and second plane of incidence.