Magnetoresistive element and magnetic recording apparatus

• US 6,816,347 B2
• Filed: 12/28/2000
• Issued: 11/09/2004
• Est. Priority Date: 12/28/1999
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Iwasaki, Hitoshi, Kamiguchi, Yuzo, Koi, Katsuhiko, Fuke, Hiromi
• Primary Examiner(s): Chen, Tianjie
• Application Number:
  US09/749,522
• Publication Number:
  US 20010013999A1
• Time in Patent Office: 1,412 Days
• Field of Search: 360/324.11, 360/324.1, 360/324.12, 360/126, 360/313, 360/131, 360/324.2, 360/327.31, 360/327.32, 296/031.4, 324/252, 148/404, 216/22
• US Class Current: 360/324.11
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/00 Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor G11B11/00 and G11B13/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A first layer region of a magnetically pinned layer in a spin valve structure, which is relatively remoter from a non-magnetic intermediate layer, is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), B (boron), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper). Thereby, it is possible to provide a structure of the magnetically pinned layer, which can be readily made using a conventional deposition method and can ensure a sufficient electron reflecting effect on the part of the magnetically pinned layer, and to provide a magnetoresistive element using a spin valve film including the particular structure.

Claims

1. A magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer do not contain niobium (Nb), tantalum (Ta) or (hafnium (Hf) and are fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer including at least a first layer region located relatively remoter from the non-magnetic intermediate layer and a second layer region located relatively nearer to the non-magnetic intermediate layer,

the first layer region being made of a ferromagnetic material containing any one selected from the group consisting of Co, CoFe, CoFeNi and CoNi, as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

2. The magnetoresistive element according to claim 1, wherein the second magnetically pinned layer is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

3. The magnetoresistive element according to claim 1, wherein the ferromagnetic material containing the element is crystalline.

4. The magnetoresistive element according to claim 1, wherein the magnetically free layer is made of a fcc Co alloy in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layer, and each of the first and second magnetically pinned layers is made of a fcc or hcp ferromagnetic material in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layers.

5. The magnetoresistive element according to claim 1, wherein concentration of the element in the first layer region is in the range from 3 atomic % to 20 atomic %.

6. The magnetoresistive element according to claim 1, wherein thickness of the first layer region is in the range from 0.5 nanometers to 2 nanometers.

7. The magnetoresistive element according to claim 1, wherein the magnetically free layer is a magnetic layer that changes in magnetic orientation with external magnetic field, and the first and second magnetically pinned layers are magnetic layers that are fixed in magnetic orientation to substantially one direction.

8. A magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer do not contain niobium (Nb), tantalum (Ta) or hafnium (Hf) and are fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer being made of a ferromagnetic material containing any one selected from the group consisting of Co, CoFe, CoFeNi and CoNi, as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper),

wherein an amount of the element contained in the first magnetically pinned layer being larger in a region thereof relatively remoter from the non-magnetic intermediate layer than a region thereof relatively nearer to the non-magnetic intermediate layer.

9. The magnetoresistive element according to claim 8, wherein the second magnetically pinned layer is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium),Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

10. The magnetoresistive element according to claim 8, wherein the ferromagnetic material containing the element is crystalline.

11. The magnetoresistive element according to claim 8, wherein the magnetically free layer is made of a fcc Co alloy in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layer, and each of the first and second magnetically pinned layers is made of a fcc or hcp ferromagnetic material in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layers.

12. The magnetoresistive element according to claim 8, wherein the magnetically free layer is a magnetic layer that changes in magnetic orientation with external magnetic field, and the first and second magnetically pinned layers are magnetic layers that are fixed in magnetic orientation to substantially one direction.

13. A magnetic recording apparatus comprising a magnetic recording medium comprising a magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer do not contain niobium (Nb), tantalum (Ta) or hafnium (Hf) and are fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer including at least a first layer region located relatively remoter from the non-magnetic intermediate layer and a second layer region located relatively nearer to the non-magnetic intermediate layer,

the first layer region being made of a ferromagnetic material containing any one selected from the group consisting of Co, CoFe, CoFeNi and CoNi, as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

14. The magnetic recording apparatus according to claim 13, wherein the second magnetically pinned layer is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

15. The magnetic recording apparatus according to claim 13, wherein concentration of the element in the first layer region is in the range from 3 atomic % to 20 atomic %.

16. The magnetic recording apparatus according to claim 13, wherein thickness of the first layer region is in the range from 0.5 nanometers to 2 nanometers.

17. A magnetic recording apparatus comprising a magnetic recording medium comprising a magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer do not contain niobium (Nb), tantalum (Ta) or hafnium (Hf) and are fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer being made of a ferromagnetic material containing any one selected from the group consisting of Co, CoFe, CoFeNi and CoNi, as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper),

wherein an amount of the element contained in the first magnetically pinned layer being larger in a region thereof relatively remoter from the non-magnetic intermediate layer than a region thereof relatively nearer to the non-magnetic intermediate layer.

18. The magnetic recording apparatus according to claim 17, wherein the second magnetically pinned layer is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), V(vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

19. The magnetic recording apparatus according to claim 17, wherein the ferromagnetic material containing the element is crystalline.

20. The magnetic recording apparatus according to claim 17, wherein the magnetically free layer is made of a fcc Co alloy in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layer, and each of the first and second magnetically pinned layers is made of a fcc or hcp ferromagnetic material in which closest-packed atomic plane is oriented substantially in parallel with a major surface of the layers.

21. A magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer being fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer including at least a first layer region located relatively remoter from the non-magnetic intermediate layer and a second layer region located relatively nearer to the non-magnetic intermediate layer,

the first region layer being made of a ferromagnetic material containing NiFe as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Os (osmium), Si (silicon), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), B (boron), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Au (gold), Pt (platinum), Ag (silver) and Cu (copper).

22. A magnetoresistive element comprising

a magnetically free layer;

a first magnetically pinned layer;

a non-magnetic intermediate layer interposed between the magnetically free layer and the first magnetically pinned layer;

a non-magnetic coupling layer located on one side of the first magnetically pinned layer opposite from the non-magnetic intermediate layer; and

a second magnetically pinned layer located on one side of the non-magnetic coupling layer opposite from the first magnetically pinned layer,

the first magnetically pinned layer and the second magnetically pinned layer being fixed in magnetization in anti-parallel to each other via the non-magnetic coupling layer,

the first magnetically pinned layer being made of a ferromagnetic material containing NiFe as a major component and the ferromagnetic material containing at least one element selected from the group consisting of Os (osmium), Si (silicon), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), B (boron), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Au (gold), Pt (platinum), Ag (silver) and Cu (copper),

wherein an amount of the element contained in the first magnetically pinned layer is larger in a region thereof relatively remoter from the non-magnetic intermediate layer than a region thereof relatively nearer to the non-magnetic intermediate layer.