Method of forming a field effect transistor having a lateral depletion structure
First Claim
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1. A method of forming a field effect transistor device comprising:
- forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type, the semiconductor substrate having a major surface and a drain region;
forming a source region of the first conductivity type in the well region;
forming a trench gate electrode adjacent to the source region;
forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and
depositing a semiconductor material of the second conductivity type within the stripe trench.
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Abstract
A method of forming a field effect transistor device includes: forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type, the semiconductor substrate having a major surface and a drain region; forming a source region of the first conductivity type in the well region; forming a trench gate electrode adjacent to the source region; forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and depositing a semiconductor material of the second conductivity type within the stripe trench.
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Citations
15 Claims
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1. A method of forming a field effect transistor device comprising:
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forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type, the semiconductor substrate having a major surface and a drain region;
forming a source region of the first conductivity type in the well region;
forming a trench gate electrode adjacent to the source region;
forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and
depositing a semiconductor material of the second conductivity type within the stripe trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a field effect transistor device comprising:
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a) forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type having a major surface and a drain region;
b) forming a source region of the first conductivity type formed in the well region;
c) forming a gate electrode adjacent to the source region;
d) forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and
e) depositing a semiconductor material of the second conductivity type within the stripe trench, wherein at least one of steps a), b), and c) occurs after step e). - View Dependent Claims (11, 12, 13, 14, 15)
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Specification