Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same

• US 6,818,530 B2
• Filed: 04/23/2003
• Issued: 11/16/2004
• Est. Priority Date: 08/27/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi, Shimoda, Tatsuya, Miyazawa, Wakao
• Primary Examiner(s): Brewster, William M.
• Application Number:
  US10/420,840
• Publication Number:
  US 20030224582A1
• Time in Patent Office: 573 Days
• Field of Search: 438/455, 438/456, 438/458, 438/464, 438/107, 438/422, 65/36
• US Class Current: 438/455
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. The transferring method may also include providing a substrate, forming a separation layer over the substrate, forming a transferred layer over the separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern. The transferring method may also include joining a transfer member to the transferred layer, removing the transferred layer from the substrate and transferring the transferred layer to the transfer member, these of which constitute a transfer process, the transfer process being repeatedly performed.

Claims

1. A transferring method, comprising:

providing a substrate wherein the substrate is transparent;

forming a separation layer over the substrate;

forming a transferred layer over the separation layer;

irradiating the separation layer with light through the substrate where the transferred layer is formed to cause exfoliation; and

causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate; and

partly cleaving the separation layer such that a part of the transferred layer is removed from the substrate and transferred to a transfer member in a given pattern.

2. The transferring method, according to claim 1, the separation layer being partly irradiated with light to cause the exfoliation.

3. The transferring method, according to claim 2, the light being irradiated through a mask.

4. The transferring method, according to claim 2, a position for the irradiation being controlled.

5. The transferring method of claim 1, the separation layer being repeatedly transferred to the transfer member.

6. The transferring method of claim 5, the transfer member being larger than the substrate.

7. The transferring method of claim 5, the transferred layer being transferred side by side in the repeating cycle.

8. The transferring method according to claim 1, further comprising forming an adhesive layer over the transferred layer, the adhesive layer joining the transferred layer to the transfer member.

9. The transferring method according to claim 8, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.

10. The transferring method according to claim 9, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.

11. The transferring method according to claim 9, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.

12. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.

13. A method for manufacturing an active matrix substrate, comprising:

providing a substrate wherein the substrate is transparent;

forming a separation layer over the substrate;

forming a transferred layer including a plurality of thin film transistors, above the separation layer;

irradiating the separation layer with light through the substrate where the transferred layer is formed to cause exfoliation; and

causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate;

partly cleaving the separation layer such that a part of the transferred layer is removed from the substrate and is transferred to a transfer member in a given pattern.

14. The transferring method of claim 13, the transfer member being larger than the substrate.

15. The method of manufacturing an active matrix substrate according to claim 13, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which has the transistor.