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Trench MOSFET with increased channel density

  • US 6,818,946 B1
  • Filed: 08/28/2000
  • Issued: 11/16/2004
  • Est. Priority Date: 08/28/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor material body having a trench extending from a major surface to a depth within the semiconductor material body;

    a gate structure disposed within the trench;

    an interlayer dielectric (ILD) region disposed within the trench above the gate structure and below the major surface of the semiconductor material body; and

    a source contact region disposed vertically along a sidewall of the trench above the gate structure and below the major surface of the semiconductor material body.

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