High-frequency semiconductor device
First Claim
1. A high-frequency semiconductor device comprising:
- a first ceramic substrate having a circuit pattern;
a second ceramic substrate on which semiconductor elements are mounted; and
a composite resin material layer that buries the semiconductor elements and is provided and vertically aligned between the first ceramic substrate and the second ceramic substrate;
wherein the composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, interlayer connector structures in which a conducting resin material has been filled are formed in the composite resin material layer, and the circuit pattern of the first ceramic substrate and a circuit pattern of the second ceramic substrate are electrically connected via the interlayer connector structures.
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Accused Products
Abstract
A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.
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Citations
4 Claims
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1. A high-frequency semiconductor device comprising:
- a first ceramic substrate having a circuit pattern;
a second ceramic substrate on which semiconductor elements are mounted; and
a composite resin material layer that buries the semiconductor elements and is provided and vertically aligned between the first ceramic substrate and the second ceramic substrate;
wherein the composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, interlayer connector structures in which a conducting resin material has been filled are formed in the composite resin material layer, and the circuit pattern of the first ceramic substrate and a circuit pattern of the second ceramic substrate are electrically connected via the interlayer connector structures. - View Dependent Claims (2, 3, 4)
- a first ceramic substrate having a circuit pattern;
Specification