High-frequency semiconductor device

• US 6,818,979 B2
• Filed: 08/04/2003
• Issued: 11/16/2004
• Est. Priority Date: 10/17/2001
• Status: Expired due to Fees

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Takehara, Hideki, Yoshikawa, Noriyuki, Kanazawa, Kunihiko, Nakatani, Seiichi
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US10/634,281
• Publication Number:
  US 20040026780A1
• Time in Patent Office: 470 Days
• Field of Search: 257/728, 257/729, 257/678, 257/687, 257/690, 257/691, 257/700, 257/701, 257/703, 257/705
• US Class Current: 257/687
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/112 : directly combined with via connections
• CPC Class Codes: H05K 1/183 : Components mounted in and supported by recessed areas of the printed circuit board
• CPC Class Codes: H05K 1/186 : manufactured by mounting on or connecting to patterned circuits before or during embedding
• CPC Class Codes: H05K 3/284 : for encapsulating mounted components H05K1/185 takes precedence
• CPC Class Codes: H05K 3/4614 : the electrical connections between the circuit boards being made during lamination
• CPC Class Codes: H05K 3/4629 : laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets

Abstract

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Claims

1. A high-frequency semiconductor device comprising:

a first ceramic substrate having a circuit pattern;

a second ceramic substrate on which semiconductor elements are mounted; and

a composite resin material layer that buries the semiconductor elements and is provided and vertically aligned between the first ceramic substrate and the second ceramic substrate;

wherein the composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, interlayer connector structures in which a conducting resin material has been filled are formed in the composite resin material layer, and the circuit pattern of the first ceramic substrate and a circuit pattern of the second ceramic substrate are electrically connected via the interlayer connector structures.

2. The high-frequency semiconductor device according to claim 1, wherein the semiconductor elements provided on the second ceramic substrate are mounted by flip-chip connection.

3. The high-frequency semiconductor device according to claim 2, wherein at least one of the semiconductor elements provided on the second ceramic substrate is connected by a metal wire.

4. The high-frequency semiconductor device according to claim 3, wherein the surroundings of the semiconductor elements provided on the second ceramic substrate and connected by the metal wire are sealed by a liquid epoxy resin.