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High-frequency semiconductor device

  • US 6,818,979 B2
  • Filed: 08/04/2003
  • Issued: 11/16/2004
  • Est. Priority Date: 10/17/2001
  • Status: Expired due to Fees
First Claim
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1. A high-frequency semiconductor device comprising:

  • a first ceramic substrate having a circuit pattern;

    a second ceramic substrate on which semiconductor elements are mounted; and

    a composite resin material layer that buries the semiconductor elements and is provided and vertically aligned between the first ceramic substrate and the second ceramic substrate;

    wherein the composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, interlayer connector structures in which a conducting resin material has been filled are formed in the composite resin material layer, and the circuit pattern of the first ceramic substrate and a circuit pattern of the second ceramic substrate are electrically connected via the interlayer connector structures.

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