Magnetoresistance effect device exchange coupling film including a disordered antiferromagnetic layer, an FCC exchange coupling giving layer, and a BCC exchange coupling enhancement layer

• US 6,819,532 B2
• Filed: 09/26/2002
• Issued: 11/16/2004
• Est. Priority Date: 10/12/2001
• Status: Active Grant

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Kamijo, Atsushi
• Primary Examiner(s): EVANS, JEFFERSON A
• Application Number:
  US10/255,847
• Publication Number:
  US 20030128483A1
• Time in Patent Office: 782 Days
• Field of Search: 360/324.1, 360/324.11, 360/324.12, 360/324.2
• US Class Current: 360/324.11
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3932 Magnetic biasing films
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A foundation layer increasing adhesive properties to a substrate, another foundation layer controlling orientation of an antiferromagnetic layer, the antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a cap protection layer are formed in the order on the substrate. The pinning layer includes two layers having an exchange coupling giving layer which exchange-couples to the antiferromagnetic layer and an exchange coupling enhancement layer which enhances the exchange coupling, the exchange coupling giving layer is made of a ferromagnetic material including Co or a Co_100-XFe_X alloy (0≦X<25) having face-centered cubic structure. The exchange coupling enhancement layer is made of Fe or a Co_100-YFe_Y alloy (25≦Y≦100) having body-centered cubic structure.

Claims

1. An exchange coupling film comprising:

an antiferromagnetic layer formed of a disordered alloy,

an exchange coupling giving layer formed of a ferromagnetic material selected from the group consisting of Co and CoFe alloy having face-centered cubic structure, being in contact with said antiferromagnetic layer, and giving exchange coupling at an interface between said antiferromagnetic layer and said exchange coupling giving layer, and

an exchange coupling enhancement layer formed of a ferromagnetic material selected from the group consisting of Fe and CoFe alloy having body-centered cubic structure and provided on said exchange coupling giving layer so that said exchange coupling giving layer is sandwiched between said antiferromagnetic layer and said exchange coupling enhancement layer, said exchange coupling enhancement layer amplifying said exchange coupling by said exchange coupling giving layer.

2. An exchange coupling film according to claim 1, wherein said disordered alloy is an IrMn alloy having the face-centered cubic structure.

3. An exchange coupling film comprising:

an antiferromagnetic layer formed of a disordered alloy,

an exchange coupling giving layer formed of an amorphous ferromagnetic material made of CoFe, being in contact with said antiferromagnetic layer, and giving exchange coupling at an interface between said antiferromagnetic layer and said exchange coupling giving layer, and

an exchange coupling enhancement layer formed of a ferromagnetic material selected from the group consisting of Fe and CoFe alloy having body-centered cubic structure and provided on said exchange coupling giving layer so that said exchange coupling giving layer is sandwiched between said antiferromagnetic layer and said exchange coupling enhancement layer, said exchange coupling enhancement layer amplifying said exchange coupling by said exchange coupling giving layer.

4. An exchange coupling film according to claim 3, wherein said disordered alloy is an IrMn alloy having the face-centered cubic structure.

5. A magneto-resistance effect device comprising:

a magnetization fixing layer in which a direction of magnetic moment is fixed,

said magnetization fixing layer comprising;

an antiferromagnetic layer formed of a disordered alloy,

an exchange coupling giving layer formed of a ferromagnetic material selected from the group consisting of Co and CoFe alloy having face-centered cubic structure, being in contact with said antiferromagnetic layer, and giving exchange coupling at an interface between said antiferromagnetic layer and said exchange coupling giving layer, and

an exchange coupling enhancement layer formed of a ferromagnetic material selected from the group consisting of Fe and CoFe alloy having body-centered cubic structure and provided on said exchange coupling giving layer so that said exchange coupling giving layer is sandwiched between said antiferromagnetic layer and said exchange coupling enhancement layer, said exchange coupling enhancement layer amplifying said exchange coupling by said exchange coupling giving layer,

a free layer in which the direction of the magnetic moment is rotated by an external magnetic field, and

a nonmagnetic layer provided between said magnetization fixing layer and said free layer.

6. A magneto-resistance effect device according to claim 5, wherein said disordered alloy is an IrMn alloy having the face-centered cubic structure.

7. A magneto-resistance effect device according to claim 5, wherein said nonmagnetic layer is made of Cu and is a giant magnetic resistance type of magneto-resistance effect device.

8. A magneto-resistance effect device according to claim 5, wherein said nonmagnetic layer includes a tunnel barrier insulator and is a tunnel magnetic resistance type of magneto-resistance effect device.

9. A magnetic head with a magneto-resistance effect device according to claim 5.

10. A magnetic random access memory with a magneto-resistance effect device according to claim 5.

11. A magneto-resistance effect device comprising:

a magnetization fixing layer in which a direction of magnetic moment is fixed,

said magnetization fixing layer comprising;

an antiferromagnetic layer formed of a disordered alloy,

an exchange coupling giving layer formed of an amorphous ferromagnetic material made of CoFe, being in contact with said antiferromagnetic layer, and giving exchange coupling at an interface between said antiferromagnetic layer and said exchange coupling giving layer, and

an exchange coupling enhancement layer formed of a ferromagnetic material selected from the group consisting of Fe and CoFe alloy having body-centered cubic structure and provided on said exchange coupling giving layer so that said exchange coupling giving layer is sandwiched between said antiferromagnetic layer and said exchange coupling enhancement layer, said exchange coupling enhancement layer amplifying said exchange coupling by said exchange coupling giving layer.

a free layer in which the direction of the magnetic moment is rotated by an external magnetic field, and

a nonmagnetic layer provided between said magnetization fixing layer and said free layer.

12. A magneto-resistance effect device according to claim 11, wherein said disordered alloy is an IrMn alloy having face-centered cubic structure.

13. A magnetic head with a magneto-resistance effect device according to claim 11.

14. A magnetic random access memory with a magneto-resistance effect device according to claim 11.