Bulk silicon mirrors with hinges underneath

• US 6,820,988 B2
• Filed: 11/18/2003
• Issued: 11/23/2004
• Est. Priority Date: 06/02/2001
• Status: Expired due to Term

• Current Assignee: Capella Photonics, Inc. (Nokia Corporation)
• Original Assignee: Capella Photonics, Inc. (Nokia Corporation)
• Inventors: van Drieenhuizen, Bert P., Kuan, Nelson, Wilde, Jeffrey P.
• Primary Examiner(s): SIKDER, MOHAMMAD YUNUS
• Application Number:
  US10/716,841
• Publication Number:
  US 20040100706A1
• Time in Patent Office: 371 Days
• Field of Search: 359/872, 359/224-226, 359/290-295, 359/315, 359/318, 359/871, 359/873-875, 356/345-346, 348/203-205, 235/462.33
• US Class Current: 359/872
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

This invention provides method and apparatus for fabricating a MEMS apparatus having a bulk element with hinges underneath. The bulk element may comprise single-crystal silicon, fabricated by way of bulk micromachining techniques. The hinges may be made of thin-films, fabricated by way of surface micromachining techniques. A distinct feature of the MEMS apparatus of the present invention is that by disposing the hinges underneath the bulk element, the surface of the bulk element can be maximized and the entire surface becomes usable (e.g., for optical beam manipulation). Such a feature would be highly advantageous in making arrayed MEMS devices, such as an array of MEMS mirrors with a high optical fill factor. Further, by advantageously making use of both bulk and surface micromachining techniques, a MEMS mirror thus produced is equipped with a large and flat mirror along with flexible hinges, hence capable of achieving a substantial rotational range at modest electrostatic drive voltages.

Claims

1. A method of making a MEMS apparatus, comprising:

a) providing a device component comprising single-crystal silicon;

b) creating at least one hinge in said device component;

c) constructing a support component having a cavity;

d) bonding said device component to said support component, such that said at least one hinge is disposed within said cavity; and

e) forming in said device component a bulk element having a device surface and a bottom surface, whereby said at least one hinge is coupled to said bulk element and is disposed below said bottom surface, thereby suspending said bulk element from said support.

2. The method of claim 1 wherein said device component comprises an SOI (Silicon-On-Insulator) wafer having a single-crystal silicon device layer and a silicon handle wafer sandwiching an insulation layer, said single-crystal silicon layer having a first surface.

3. The method of claim 2 wherein said at least one hinge comprises first and second hinge elements, fabricated on said first surface of said single-crystal silicon device layer by a surface micromachining technique.

4. The method of claim 2 wherein said at least one hinge is created in said single-crystal silicon device layer by a bulk micromachining technique.

5. The method of claim 3 wherein said step d) further includes removing said silicon handle wafer along with said insulation layer, thereby revealing a second surface of said single-crystal silicon device layer.

6. The method of claim 5 wherein said step e) includes using a bulk micromachining technique to form said bulk element in said single-crystal silicon device layer, whereby said first and second surfaces of said single-crystal silicon device layer constitute said bottom and device surfaces of said bulk element.

7. The method of claim 1 further comprising the step of making said device surface optically reflective.

8. The method of claim 7 wherein said device surface is made optically reflective by depositing a reflective layer thereon.

9. The method of claim 1 wherein said device component comprises. an epitaxial silicon wafer.

10. The method of claim 1 wherein said support component is fabricated out of an SOI wafer.

11. The method of claim 1 wherein said step c) further includes disposing at least one electrode in said cavity.