Particle beam biaxial orientation of a substrate for epitaxial crystal growth
First Claim
1. A method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure comprising the steps of:
- (a) contacting said structure with an oblique particle beam thereby forming in said structure a nucleating surface having increased desired biaxial orientation; and
(b) depositing a layer onto said previously formed structure, which layer is capable of attaining a biaxial orientation in registry with said nucleating surface (c) wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure.
3 Assignments
0 Petitions
Accused Products
Abstract
The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
-
Citations
42 Claims
-
1. A method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure comprising the steps of:
-
(a) contacting said structure with an oblique particle beam thereby forming in said structure a nucleating surface having increased desired biaxial orientation; and
(b) depositing a layer onto said previously formed structure, which layer is capable of attaining a biaxial orientation in registry with said nucleating surface (c) wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure. - View Dependent Claims (35, 36, 37, 38, 42)
-
-
2. A method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure comprising contacting said structure with an oblique particle beam thereby forming in said structure a nucleating surface having increased desired biaxial orientation;
- wherein the energy level of said oblique particle beam is from about 10 eV to about 20,000 eV.
- View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
20. A method of growing a biaxially oriented crystalline formation comprising the steps of:
-
(a) contacting a previously formed non-single-crystal orientable structure with an oblique particle beam, thereby forming in said structure a nucleating surface having increased biaxial orientation; and
(b) epitaxially growing said crystalline formation using said nucleating surface to promote the epitaxial growth;
(c) wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
-
-
32. A method of crystal growth comprising the step of epitaxially growing a crystalline lattice nucleated by a biaxially oriented portion of a structure, wherein said biaxially oriented portion is formed by contacting said structure with an oblique particle beam, wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure.
-
33. A method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure comprising contacting said structure with an oblique particle beam thereby forming in said structure a nucleating surface having increased desired biaxial orientation, wherein said structure is selected from the group consisting of metal oxides, metal carbides, metal nitrides, metal borides, metal sulfides, metal chalcogenides, metal halides mixed metals, mixed metal oxides, mixed metal carbides, mixed metal nitrides, mixed metal borides, mixed metal sulfides, mixed metal chalcogenides, mixed metal halides, rare earths, rare earth oxides, rare earth carbides, rare earth nitrides, rare earth borides, rare earth sulfides, rare earth chalcogenides, rare earth halides, alkaline earths, alkaline earth oxides, alkaline earth carbides, alkaline earth nitrides, alkaline earth borides, alkaline earth sulfides, alkaline earth chalcogenides, alkaline earth halides, semiconductors, semiconductor oxides, semiconductor nitrides, semiconductor carbides, semiconductor borides, semiconductor sulfides, semiconductor chalcogenides, semiconductor halides, and organic polymers, wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure.
-
34. An at least partially crystalline structure comprising:
-
(a) a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam;
(b) from 0 to 10 adjacent orientation-transmitting layers; and
(c) a crystalline active layer;
wherein said 0 to 10 orientation-transmitting layers are adjacent said nucleating surface and are adjacent said active layer, whereby said active layer is oriented in registry with said nucleating surface, (d) wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure.
-
-
39. A method of contacting a previously formed non-single-crystal structure with an oblique particle beam comprising:
-
contacting said structure with an oblique particle beam having a first component;
whereby the first component is deposited into the structure;
wherein at least one said step of contacting said structure with an oblique particle beam is not carried out simultaneously with carrying out deposition on said structure. - View Dependent Claims (40, 41)
-
Specification