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Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers

  • US 6,821,571 B2
  • Filed: 06/18/1999
  • Issued: 11/23/2004
  • Est. Priority Date: 06/18/1999
  • Status: Expired due to Fees
First Claim
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1. A method of processing a semiconductor substrate, comprising:

  • depositing a silicon carbide layer on a semiconductor substrate;

    treating the silicon carbide layer with a plasma consisting essentially of an inert gas; and

    depositing a layer comprising a silicon-carbon-oxygen based material over the silicon carbide layer.

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