Method of manufacturing a semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer.
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Accused Products
Abstract
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021 /cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
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Citations
64 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (2, 3, 4, 9, 12, 15, 18, 26, 29, 32, 35, 38)
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5. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element with a concentration gradient set higher toward the film surface;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (7, 10, 13, 16, 19, 24, 27, 30, 33, 36, 39)
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6. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element;
forming a third semiconductor film on the second semiconductor film, the third semiconductor film containing a noble gas element in a concentration higher than the noble gas element concentration in the second semiconductor film;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film and the third semiconductor film; and
removing the barrier layer. - View Dependent Claims (8, 11, 14, 17, 20, 21, 22, 23, 25, 28, 31, 34, 37, 40)
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41. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer, wherein the barrier layer and the second semiconductor film are formed successively without exposing the substrate to the air. - View Dependent Claims (42, 43, 44)
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45. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
forming a barrier layer on the crystallized first semiconductor film;
exposing a surface of the barrier layer to a plasma including a noble gas element;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (46, 47, 48)
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49. A method of manufacturing a semiconductor device, comprising:
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forming on an insulating surface a first semiconductor film having an amorphous structure;
providing the first semiconductor film with a material comprising a metal element;
crystallizing the first semiconductor film to form a first semiconductor film having a crystal structure after providing said material;
exposing a surface of the crystallized first semiconductor film to plasma including a noble gas element;
forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (50, 51, 52)
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53. A method of manufacturing a semiconductor device, comprising:
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forming a barrier layer on the crystallized first semiconductor film;
forming a second semiconductor film containing a noble gas element on the barrier layer;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (56, 59, 62)
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54. A method of manufacturing a semiconductor device, comprising:
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forming a barrier layer on a crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element with a concentration gradient set higher toward the film surface;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film; and
removing the barrier layer. - View Dependent Claims (57, 60, 63)
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55. A method of manufacturing a semiconductor device, comprising:
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forming a barrier layer on a crystallized first semiconductor film;
forming a second semiconductor film on the barrier layer, the second semiconductor film containing a noble gas element;
forming a third semiconductor film on the second semiconductor film, the third semiconductor film containing a noble gas element in a concentration higher than the noble gas element concentration in the second semiconductor film;
removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
removing the second semiconductor film and the third semiconductor film; and
removing the barrier layer. - View Dependent Claims (58, 61, 64)
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Specification