Semiconductor light-emitting device

• US 6,822,266 B2
• Filed: 05/24/2002
• Issued: 11/23/2004
• Est. Priority Date: 05/24/2001
• Status: Expired due to Term

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ohyama, Shouichi, Nakatsu, Hiroshi, Kurahashi, Takahisa, Murakami, Tetsurou
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): FORDE, REMMON R
• Application Number:
  US10/153,874
• Publication Number:
  US 20020185653A1
• Time in Patent Office: 914 Days
• Field of Search: 257/86, 257/12, 257/13, 257/14, 257/25, 257/436
• US Class Current: 257/86
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8×10¹⁷ cm⁻³. Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.

Claims

1. A semiconductor light-emitting device comprising:

a resonator consisting of a pair of multilayer reflection films formed with a predetermined gap therebetween on a semiconductor substrate; and

a quantum well active layer at a position of an antinode of a standing wave generated in the resonator, wherein

the quantum well active layer is doped with an impurity.

2. The semiconductor light-emitting device according to claim 1, wherein the quantum well active layer is a single quantum well active layer.

3. The semiconductor light-emitting device according to claim 1, wherein the impurity includes both a p-type impurity and an n-type impurity.

4. The semiconductor light-emitting device according to claim 3, wherein each concentration of the p-type impurity and the n-type impurity is 7×

1016 cm-3 or higher.

7. The semiconductor light-emitting device according to claim 1, wherein the semiconductor substrate is a GaAs substrate.

10. The semiconductor light-emitting device according to claim 7, wherein the quantum well active layer is made of AlyGazInl-y-zP (0≦

y≦

1,0≦

z≦

1).

13. The semiconductor light-emitting device according to claim 1, wherein a semiconductor layer including the multilayer reflection film and the single quantum well active layer is formed by a metal organized chemical vapor deposition method.

5. A semiconductor light-emitting device comprising:

a resonator consisting of a pair of multilayer reflection films formed with a predetermined gap therebetween on a semiconductor substrate; and

a quantum well active layer at a position of an antinode of a standing wave generated in the resonator, wherein

the half-value width of the light-emitting spectrum by the quantum well active layer is 25 nm or greater, wherein

the quantum well active layer is a single quantum well active layer.

8. The semiconductor light-emitting device according to claim 5, wherein the semiconductor substrate is a GaAs substrate.

11. The semiconductor light-emitting device according to claim 8, wherein the quantum well active layer is made of AlyGazInl-y-zP (0≦

y1,0≦

z≦

1).

14. The semiconductor light-emitting device according to claim 5, wherein a semiconductor layer including the multilayer reflection film and the single quantum well active layer is formed by a metal organized chemical vapor deposition method.

6. A semiconductor light-emitting device comprising:

a resonator consisting of a pair of multilayer reflection films formed with a predetermined gap therebetween on a semiconductor substrate; and

a single quantum well active layer at a position of an antinode of a standing wave generated in the resonator, wherein

the rate of minimum optical output to the maximum optical output in the temperature range of −

20°

C. to 70°

C. is 0.8 or higher.

9. The semiconductor light-emitting device according to claim 6, wherein the semiconductor substrate is a GaAs substrate.

12. The semiconductor light-emitting device according to claim 9, wherein the single quantum well active layer is made of AlyGazInl-y-zP (0≦

y≦

1,0≦

z≦

1).

15. The semiconductor light-emitting device according to claim 6, wherein a semiconductor layer including the multilayer reflection film and the single quantum well active layer is formed by a metal organized chemical vapor deposition method.