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Sputtered silicon for microstructures and microcavities

  • US 6,822,304 B1
  • Filed: 11/10/2000
  • Issued: 11/23/2004
  • Est. Priority Date: 11/12/1999
  • Status: Expired due to Fees
First Claim
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1. A structure comprising:

  • a structural layer having a core sputtered silicon layer patterned with released structures thereof;

    a first conductive layer in contact with and on top of said core sputtered silicon layer; and

    a second conductive layer in contact with and below said core sputtered silicon layer, wherein said first and second conductive layers have essentially the same shape as said core sputtered silicon layer; and

    a complimentary metal oxide semiconductor circuitry integrated with said structural layer, wherein said semiconductor circuitry has a metalized circuitry layer on top of an oxidized layer of a substrate.

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