Semiconductor integrated circuit

• US 6,822,310 B2
• Filed: 04/28/2003
• Issued: 11/23/2004
• Est. Priority Date: 07/10/2002
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Iwamoto, Takeshi, Kono, Kazushi
• Primary Examiner(s): Cao, Phat X.
• Assistant Examiner(s): Doan, Theresa T.
• Application Number:
  US10/424,129
• Publication Number:
  US 20040007777A1
• Time in Patent Office: 575 Days
• Field of Search: 257/529, 257/209, 257/530
• US Class Current: 257/529
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor integrated circuit according to the invention includes a wiring member formed on a main face of a semiconductor substrate, a fusing member connected to the wiring member and having a predetermined thickness, a barrier member for covering a bottom face and a side face of the fusing member, a light absorbing member for covering at least a side face portion of the barrier member for covering the fusing member, and an insulating member for embedding the wiring member, the fusing member, the barrier member and the light absorbing member. A complex permittivity of the light absorbing member is provided with a real part smaller than that of the fusing member in absolute value and an imaginary part larger than that of the fusing member.

Claims

1. A semiconductor integrated circuit comprising:

a wiring member formed on a main face of a semiconductor substrate;

a fusing member connected to the wiring member and having a predetermined thickness;

a light absorbing member for covering a bottom face and a side face of the fusing member; and

an insulating member for embedding the wiring member, the fusing member and the light absorbing member therein;

wherein a complex permittivity of the light absorbing member is provided with a real part smaller than that of the fusing member in absolute value and an imaginary part larger than that of the fusing member.

2. The semiconductor integrated circuit according to claim 1:

wherein the wiring member includes a light absorbing member for covering a bottom face and a side face thereof, as the fusing member does.

3. The semiconductor integrated circuit according to claim 1:

wherein the fusing member is comprised of metal whose major constituent is copper.

4. The semiconductor integrated circuit according to claim 1:

wherein the light absorbing member is comprised of tantalum nitride or titanium nitride.

5. The semiconductor integrated circuit according to claim 1:

wherein the fusing member is thinner than the wiring member in film thickness formed at the same stage as that of the fusing member.

6. A semiconductor integrated circuit comprising:

a wiring member formed on a main face of a semiconductor substrate;

a fusing member connected to the wiring member and having a predetermined thickness;

a barrier member for covering a bottom face and a side face of the fusing member;

a light absorbing member for covering at least a side face portion of the barrier member for covering the fusing member; and

an insulating member for embedding the wiring member, the fusing member, the barrier member and the light absorbing member therein;

wherein a complex permittivity of the light absorbing member is provided with a real part smaller than that of the fusing member in absolute value and an imaginary part larger than that of the fusing member.

7. The semiconductor integrated circuit according to claim 6:

wherein the wiring member includes a barrier member for covering a bottom face and a side face thereof and a light absorbing member for covering at least a side face portion of the barrier member, as the fusing member does.

8. The semiconductor integrated circuit according to claim 6:

wherein the fusing member is comprised of metal whose major constituent is copper.

9. The semiconductor integrated circuit according to claim 6:

wherein the light absorbing member includes tantalum nitride, tungsten nitride or titanium nitride.

10. The semiconductor integrated circuit according to claim 6:

wherein a thickness of the light absorbing member is 50% or above and 300% or below of a thickness of the fusing member where light for blowing out shows an maximum absorption efficiency.

11. The semiconductor integrated circuit according to claim 6:

wherein a height of the light absorbing member is a half-wavelength of light used for blowing the fusing member multiplied by an integer, plus or minus 37% of the half-wavelength.

12. The semiconductor integrated circuit according to claim 11:

wherein the integer for multiplying a half-wavelength of light is 2 or 3.

13. The semiconductor integrated circuit according to claim 6:

wherein the insulating member includes a first insulating film embedding the fusing member as high as the top face thereof, and a second insulating film for covering the first insulating film.

14. The semiconductor integrated circuit according to claim 13:

wherein a reflecting film layer having a higher refractive index than the second insulating film is formed between the main face and a bottom face of the fusing member.

15. The semiconductor integrated circuit according to claim 6:

wherein the barrier member is comprised of tantalum nitride or titanium nitride.

16. The semiconductor integrated circuit according to claim 6:

wherein the fusing member is thinner than the wiring member in film thickness which is formed at the same stage that the fusing member is formed.