Base for a NPN bipolar transistor
First Claim
Patent Images
1. A base region for a NPN transistor, the base region comprising:
- Boron dopants; and
Indium dopants, wherein the Boron and Indium dopants form the base region of P conductivity type, wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction.
3 Assignments
0 Petitions
Accused Products
Abstract
An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.
50 Citations
13 Claims
-
1. A base region for a NPN transistor, the base region comprising:
-
Boron dopants; and
Indium dopants, wherein the Boron and Indium dopants form the base region of P conductivity type, wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A NPN transistor comprising:
-
a collector of a N conductivity type formed in a substrate, the substrate having a working surface, a base of a P conductivity type formed in the collector adjacent the working surface of the substrate, wherein the P conductivity type is formed with both Boron and Indium dopants;
an emitter of the N conductivity type formed in the base adjacent the working surface of the substrate, wherein the concentration of Boron dopants is greater than the concentration of Indium dopants at an emitter-base junction; and
wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction. - View Dependent Claims (10, 11, 12)
a collector contact of the N conductivity type with high density formed in the collector a select distance from the emitter and adjacent the working surface of the substrate.
-
-
13. A base region for a NPN transistor, the base region comprising:
-
Boron dopants;
Indium dopants, wherein the ratio of Indium dopants to Boron dopants is selected to create a desired current gain temperature coefficient;
wherein the concentration of Boron dopants is greater than the concentration of Indium dopants adjacent an emitter-base junction to set base resistance with the Boron dopants; and
wherein the concentration of Indium dopants is greater than the concentration of Boron dopants adjacent a base-collector junction to achieve relatively high early voltage.
-
Specification