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Base for a NPN bipolar transistor

  • US 6,822,314 B2
  • Filed: 06/12/2002
  • Issued: 11/23/2004
  • Est. Priority Date: 06/12/2002
  • Status: Expired due to Fees
First Claim
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1. A base region for a NPN transistor, the base region comprising:

  • Boron dopants; and

    Indium dopants, wherein the Boron and Indium dopants form the base region of P conductivity type, wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction.

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