Half-bridge circuit
First Claim
Patent Images
1. A half-bridge circuit, comprising:
- a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor, said first semiconductor body further having a front side and a rear side, said first MOS transistor having a drive connection and a first load path connection accessible at said front side of said first semiconductor body, said first MOS transistor having a second load path connection accessible at said rear side of said first semiconductor body;
a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor, said second semiconductor body further having a front side and a rear side, said second MOS transistor having a drive connection and a first load path connection accessible at said front side of said second semiconductor body, said second MOS transistor having a second load path connection accessible at said rear side of said second semiconductor body;
a drive circuit for driving said first MOS transistor and said second MOS transistor;
a common connection plate to which said first MOS transistor and said second MOS transistor are applied; and
a first connection terminal and a second connection terminal;
said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal.
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Accused Products
Abstract
A half-bridge circuit includes: a vertically designed n-conducting first MOS transistor that is integrated in a first semiconductor body having a front side and a rear side; and a vertically designed p-conducting second MOS transistor that is integrated in a second semiconductor body having a front side and a rear side. The first and second transistors are connected in series between a first connection terminal and a second connection terminal. The half-bridge circuit also includes a drive circuit for driving the first and second transistors. The first and second transistors are applied to a common connection plate.
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Citations
11 Claims
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1. A half-bridge circuit, comprising:
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a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor, said first semiconductor body further having a front side and a rear side, said first MOS transistor having a drive connection and a first load path connection accessible at said front side of said first semiconductor body, said first MOS transistor having a second load path connection accessible at said rear side of said first semiconductor body;
a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor, said second semiconductor body further having a front side and a rear side, said second MOS transistor having a drive connection and a first load path connection accessible at said front side of said second semiconductor body, said second MOS transistor having a second load path connection accessible at said rear side of said second semiconductor body;
a drive circuit for driving said first MOS transistor and said second MOS transistor;
a common connection plate to which said first MOS transistor and said second MOS transistor are applied; and
a first connection terminal and a second connection terminal;
said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal. - View Dependent Claims (2, 3, 4, 5, 6)
a third semiconductor body into which said drive circuit is integrated; and
said third semiconductor body being applied to said front side of said first semiconductor body.
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5. The half-bridge circuit according to claim 1, comprising:
- a common housing surrounding said first semiconductor body, said second semiconductor body, and said drive circuit.
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6. The half-bridge circuit according to claim 1, comprising:
a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor.
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7. A half-bridge circuit, comprising:
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a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conduction MOS transistor and having a first load path connection;
a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor and having a first load path connection;
a drive circuit for driving said first MOS transistor and said second MOS transistor;
a common connection plate to which said first MOS transistor and said second MOS transistor are applied;
a first connection terminal and a second connection terminal, said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal;
a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor, said capacitor applied to said first semiconductor body and to said second semiconductor body, said capacitor having a first connection connected to said first semiconductor body, and said capacitor having a second connection connected to said second semiconductor body. - View Dependent Claims (8, 9)
a bonding wire electrically connecting said first connection of said capacitor to said first semiconductor body; and
a bonding wire electrically connecting said second connection of said capacitor to said second semiconductor body.
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9. The half-bridge circuit according to claim 7, comprising:
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a first layer electrically connecting said first connection of said capacitor to said first semiconductor body; and
a second layer electrically connecting said second connection of said capacitor to said second semiconductor body;
said first layer and said second layer being made of a material selected from the group consisting of a soldering material and an electrically conductive adhesive.
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10. A switching regulator, comprising:
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a half-bridge circuit, including;
a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor, said first semiconductor body further having a front side and a rear side, said first MOS transistor having a drive connection and a first load path connection accessible at said front side of said first semiconductor body, said first MOS transistor having a second load path connection accessible at said rear side of said first semiconductor body;
a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor, said second semiconductor body further having a front side and a rear side, said second MOS transistor having a drive connection and a first load path connection accessible at said front side of said second semiconductor body, said second MOS transistor having a second load path connection accessible at said rear side of said second semiconductor body;
a drive circuit for driving said first MOS transistor and said second MOS transistor;
a common connection plate to which said first MOS transistor and said second MOS transistor are applied; and
a first connection terminal and a second connection terminal;
said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal.
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11. A switching regulator, comprising:
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a half-bridge circuit, including;
a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor and having a first load path connection;
a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor and having a first load path connection;
a drive circuit for driving said first MOS transistor and said second MOS transistor;
a common connection plate to which said first MOS transistor and said second MOS transistor are applied;
a first connection terminal and a second connection terminal, said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal;
a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor, said capacitor applied to said first semiconductor body and to said second semiconductor body, said capacitor having a first connection connected to said first semiconductor body, and said capacitor having a second connection connected to said second semiconductor body.
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Specification