Half-bridge circuit

• US 6,822,399 B2
• Filed: 01/24/2002
• Issued: 11/23/2004
• Est. Priority Date: 01/24/2001
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Kiep, Andreas, Feldtkeller, Martin
• Primary Examiner(s): Philogene, Haissa
• Application Number:
  US10/056,767
• Publication Number:
  US 20020096779A1
• Time in Patent Office: 1,034 Days
• Field of Search: 315/209.R, 315/291, 315/307, 315/244, 257/338, 257/E21.544, 257/E27.059, 257/E27.06, 363/144, 363/17, 363/37, 363/56.01, 363/56.03, 363/131, 363/132, 363/134, 323/224, 323/271, 323/287
• US Class Current: 315/209.00R
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

A half-bridge circuit includes: a vertically designed n-conducting first MOS transistor that is integrated in a first semiconductor body having a front side and a rear side; and a vertically designed p-conducting second MOS transistor that is integrated in a second semiconductor body having a front side and a rear side. The first and second transistors are connected in series between a first connection terminal and a second connection terminal. The half-bridge circuit also includes a drive circuit for driving the first and second transistors. The first and second transistors are applied to a common connection plate.

Claims

1. A half-bridge circuit, comprising:

a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor, said first semiconductor body further having a front side and a rear side, said first MOS transistor having a drive connection and a first load path connection accessible at said front side of said first semiconductor body, said first MOS transistor having a second load path connection accessible at said rear side of said first semiconductor body;

a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor, said second semiconductor body further having a front side and a rear side, said second MOS transistor having a drive connection and a first load path connection accessible at said front side of said second semiconductor body, said second MOS transistor having a second load path connection accessible at said rear side of said second semiconductor body;

a drive circuit for driving said first MOS transistor and said second MOS transistor;

a common connection plate to which said first MOS transistor and said second MOS transistor are applied; and

a first connection terminal and a second connection terminal;

said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal.

2. The half-bridge circuit according to claim 1, comprising an electrically conductive adhesive that bonds said first semiconductor body and said second semiconductor body onto said common connection plate.

3. The half-bridge circuit according to claim 1, comprising an electrically conductive adhesive that solders said first semiconductor body and said second semiconductor body onto said common connection plate.

4. The half-bridge circuit according to claim 1, comprising:

a third semiconductor body into which said drive circuit is integrated; and

said third semiconductor body being applied to said front side of said first semiconductor body.

5. The half-bridge circuit according to claim 1, comprising:

a common housing surrounding said first semiconductor body, said second semiconductor body, and said drive circuit.

6. The half-bridge circuit according to claim 1, comprising:

a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor.

7. A half-bridge circuit, comprising:

a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conduction MOS transistor and having a first load path connection;

a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor and having a first load path connection;

a drive circuit for driving said first MOS transistor and said second MOS transistor;

a common connection plate to which said first MOS transistor and said second MOS transistor are applied;

a first connection terminal and a second connection terminal, said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal;

a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor, said capacitor applied to said first semiconductor body and to said second semiconductor body, said capacitor having a first connection connected to said first semiconductor body, and said capacitor having a second connection connected to said second semiconductor body.

8. The half-bridge circuit according to claim 7, comprising:

a bonding wire electrically connecting said first connection of said capacitor to said first semiconductor body; and

a bonding wire electrically connecting said second connection of said capacitor to said second semiconductor body.

9. The half-bridge circuit according to claim 7, comprising:

a first layer electrically connecting said first connection of said capacitor to said first semiconductor body; and

a second layer electrically connecting said second connection of said capacitor to said second semiconductor body;

said first layer and said second layer being made of a material selected from the group consisting of a soldering material and an electrically conductive adhesive.

10. A switching regulator, comprising:

a half-bridge circuit, including;

a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor, said first semiconductor body further having a front side and a rear side, said first MOS transistor having a drive connection and a first load path connection accessible at said front side of said first semiconductor body, said first MOS transistor having a second load path connection accessible at said rear side of said first semiconductor body;

a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor, said second semiconductor body further having a front side and a rear side, said second MOS transistor having a drive connection and a first load path connection accessible at said front side of said second semiconductor body, said second MOS transistor having a second load path connection accessible at said rear side of said second semiconductor body;

a drive circuit for driving said first MOS transistor and said second MOS transistor;

a common connection plate to which said first MOS transistor and said second MOS transistor are applied; and

a first connection terminal and a second connection terminal;

said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal.

11. A switching regulator, comprising:

a half-bridge circuit, including;

a first semiconductor body having a first MOS transistor that is integrated in said first semiconductor body, said first MOS transistor being a vertically designed n-conducting MOS transistor and having a first load path connection;

a second semiconductor body having a second MOS transistor that is integrated in said second semiconductor body, said second MOS transistor being a vertically designed p-conducting MOS transistor and having a first load path connection;

a drive circuit for driving said first MOS transistor and said second MOS transistor;

a common connection plate to which said first MOS transistor and said second MOS transistor are applied;

a first connection terminal and a second connection terminal, said first MOS transistor and said second MOS transistor being connected in series between said first connection terminal and said second connection terminal;

a capacitor connected between said first load path connection of said first transistor and said first load path connection of said second transistor, said capacitor applied to said first semiconductor body and to said second semiconductor body, said capacitor having a first connection connected to said first semiconductor body, and said capacitor having a second connection connected to said second semiconductor body.